訂購數(shù)量 | 價格 |
---|---|
1+ |
HGT1S10N120BNST_ONSEMI/安森美半導(dǎo)體_IGBT 晶體管 N-Channel IGBT NPT Series 1200V富利微電子
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
HGT1S10N120BNST
- 功能描述:
IGBT 晶體管 N-Channel IGBT NPT Series 1200V
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集電極—發(fā)射極最大電壓
- VCEO:
650 V
- 集電極—射極飽和電壓:
2.3 V
- 柵極/發(fā)射極最大電壓:
20 V 在25
- C的連續(xù)集電極電流:
150 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
187 W
- 封裝/箱體:
TO-247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
深圳市富利微電子科技有限公司
- 商鋪:
- 聯(lián)系人:
肖先生/朱小姐
- 手機(jī):
15817200827
- 詢價:
- 電話:
0755-23894711/15817200827
- 傳真:
0755-23894711
- 地址:
深圳市福田區(qū)華強(qiáng)北路賽格廣場4501A室
相近型號
- HGT1S12N50
- HGT1S12N60A4
- HGT1N30N60A4D
- HGT1S12N60A4DS
- HGT1N30N60A4
- HGT1S12N60A4S
- HGT193N60C3DS
- HGT132
- HGT1S12N60A4S9A
- HGT1S12N60A4S9ACT
- HGT110N20S
- HGT1S12N60A4S9ATR
- HGT019N08A
- HGT1S12N60B3
- HGSSBN001A
- HGT1S12N60B3DS
- HGSSBM001A
- HGT1S12N60B3S
- HGT1S12N60C3
- HGSR51211Q02
- HGSR51111W00
- HGT1S12N60C3D
- HGT1S12N60C3DS
- HGSR51111U02
- HGSR51111Q00
- HGT1S12N60C3DS9A
- HGSR51111
- HGT1S12N60C3DST
- HGT1S12N60C3R
- HGSR1111V00
- HGT1S12N60C3S
- HGSR11111V00
- HGSP0801DR
- HGT1S12N60C3S9A
- HG-SN52J-S100
- HGT1S12N60C3S9AR4501
- HGT1S14N36G3VL
- HG-SN302BJ-S100
- HG-SN152J-S100
- HG-SN102J-S100
- HG-SN102BJ-S100
- HGT1S14N36G3VLS
- HGT1S14N36G3VLT
- HGSM5064
- HGT1S14N36GVL
- HGSM-5001
- HGT1S14N36GVLS
- HGSL1205-R42K-2
- HGT1S14N37G3VLS
- HG-SC113