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HGT1S12N60A4S9A中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

HGT1S12N60A4S9A
廠商型號(hào)

HGT1S12N60A4S9A

功能描述

600V, SMPS Series N-Channel IGBTs

文件大小

229.61 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-25 17:40:00

HGT1S12N60A4S9A規(guī)格書詳情

The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150°C.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Features

? >100kHz Operation at 390V, 12A

? 200kHz Operation at 390V, 9A

? 600V Switching SOA Capability

? Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125°C

? Low Conduction Loss

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

產(chǎn)品屬性

  • 型號(hào):

    HGT1S12N60A4S9A

  • 功能描述:

    IGBT 晶體管 600V N-Channel IGBT SMPS Series

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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20000
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FAIRCHILD
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999999
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HAR
2023+
TO-263
1400
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30011
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FAIRCHILD
23+
NA
19960
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FAIRCHILD
24+
TO-263(D2PAK)
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FAIRCHILD
05+
原廠原裝
5011
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