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HGTP10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HM10N120T

1200V/10ATrenchFieldStopIGBT

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

MPCK10N120A

ZeroReverseRecoveryCurrent

Features ?ZeroReverseRecoveryCurrent ?ZeroForwardRecoveryVoltage ?Temperature-independentSwitchingBehavior ?PositiveTemperatureCoefficientonVF ?High-speedswitchingpossible ?Highsurgecurrentcapability Applications ?SwitchModePowerSupply(SMPS) ?MotorDrives ?

FS

First Silicon Co., Ltd

SCT10N120

HighvoltageDC-DCconverters

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SCT10N120AG

Automotive-gradesiliconcarbidePowerMOSFET1200V,12A,520mΩ(typ.,TJ=150°C)inanHiP247package

Features ?AEC-Q101qualified ?Verytightvariationofon-resistancevs.temperature ?Veryhighoperatingtemperaturecapability(TJ=200°C) ?Veryfastandrobustintrinsicbodydiode ?Lowcapacitance Applications ?Motordrives ?EVchargers ?HighvoltageDC-DCconverters ?Swi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SGH10N120RUF

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH10N120RUFD

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

TRS10N120HB

SiCSchottkyBarrierDiode

Applications ?PowerFactorCorrection ?SolarInverters ?UninterruptiblePowerSupplies ?DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF(PerLeg)=1.27V(typ.) (3)Lowtotalcapacitivecharge:Qc(PerLeg)=30nC(typ.) (4)Lowreversecurre

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

詳細(xì)參數(shù)

  • 型號：

    HGTG10N120BND_Q

  • 功能描述：

    IGBT 晶體管 35A 1200V N-Ch

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
仙童正品
23+
TO-247
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
FAIRCHI
24+
TO-247
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
FAIRCHILD
23+
TO-247
368
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
FAIRCHILD
20+
TO-247
368
進(jìn)口原裝現(xiàn)貨,假一賠十
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ON/安森美
24+
19081909
28183
只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
FAIRCHILD/仙童
23+
TO247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
FAIRCHILD/仙童
24+
TO247
60000
詢價(jià)
ON/安森美
24+
TO-247
39197
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
FAIRCHILD/仙童
TO-247
22+
6000
十年配單,只做原裝
 詢價(jià)
FAIRCHILD/仙童
23+
TO-247
6000
原裝正品，支持實(shí)單
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更多HGTG10N120BND_Q供應(yīng)商 更新時(shí)間2025-5-15 15:16:00

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