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HGTG30N60B3

60A, 600V, UFS Series N-Channel IGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTG30N60B3

60A, 600V, UFS Series N-Channel IGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

HGTG30N60B3

Package:TO-247-3;包裝:管件 類別:分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 60A 208W TO247

ONSEMION Semiconductor

安森美半導體安森美半導體公司

HGTG30N60B3D

60A, 600V, UFS Series N-Channel IGBT

60A,600V,UFSSeriesN-ChannelIGBT withAnti-ParallelHyperfastDiode TheHGTG30N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabip

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTG30N60B3D

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG30N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

Intersil

Intersil Corporation

HGTG30N60B3D

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTG30N60B3D_04

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTG30N60B3D

Package:TO-247-3;包裝:管件 類別:分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 60A TO247-3

ONSEMION Semiconductor

安森美半導體安森美半導體公司

G30N60B3

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

G30N60B3D

60A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    HGTG30N60B3

  • 制造商:

    onsemi

  • 類別:

    分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    1.9V @ 15V,30A

  • 開關能量:

    500μJ(開),680μJ(關)

  • 輸入類型:

    標準

  • 25°C 時 Td(開/關)值:

    36ns/137ns

  • 測試條件:

    480V,30A,3 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-247-3

  • 供應商器件封裝:

    TO-247-3

  • 描述:

    IGBT 600V 60A 208W TO247

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
24+
TO247
8950
BOM配單專家,發(fā)貨快,價格低
詢價
onsemi(安森美)
23+
TO-247
1224
原廠訂貨渠道,支持BOM配單一站式服務
詢價
FAIRCHILD
2020+
TO247
18600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
ON
23+
SOIC
96000
鄭重承諾只做原裝進口現(xiàn)貨
詢價
仙童
06+
TO-247
6000
原裝
詢價
FAIRCHIL
24+
TO-247
8866
詢價
原廠
23+
TO-247
5000
原裝正品,假一罰十
詢價
FAIRCHILD
23+
TO-247
9526
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
ONSemiconductor
24+
NA
3605
進口原裝正品優(yōu)勢供應
詢價
更多HGTG30N60B3供應商 更新時間2025-2-23 11:04:00