首頁 >HGTH12N50CID>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
PolarPowerMOSFETHiperFET Polar?PowerMOSFETHiperFET? N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=500mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarPowerMOSFETHiperFET Polar?PowerMOSFETHiperFET? N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
PolarPowerMOSFETHiPerFET Polar?PowerMOSFETHiPerFET?(ElectricallyIsolatedTab) N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?Plasticovermoldedtabforelectricalisolation ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easyt | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeAvalancheRated N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?Dynamicdv/dtRating ?AvalancheRated ?FastIntrinsicRectifier ?LowQG ?LowRDS(on) ?LowDrain-to-TabCapacitance ?LowPackageInductance Advantages ?EasytoMount | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
12AMPS,450-500V,0.4OM/0.5OM ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
StandardPowerMOSFET Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance( | IXYS IXYS Corporation | IXYS | ||
12AMPS,450-500V,0.4OM/0.5OM ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IXYS IXYS Corporation | IXYS | ||
StandardPowerMOSFET Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance( | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarTMPowerMOSFET | IXYS IXYS Corporation | IXYS |
詳細(xì)參數(shù)
- 型號(hào):
HGTH12N50CID
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
52000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
Intersil |
24+ |
TO-218 |
8866 |
詢價(jià) | |||
FUJITSU/富士通 |
23+ |
TO-220F |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
INTERSIL |
23+ |
TO-247 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
INTERSIL |
TO-247 |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
INTERSIL |
23+ |
TO-247 |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
INTERSIL |
23+ |
TO-247 |
8400 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
INTERSIL |
23+ |
TO-247 |
8400 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
INTERSIL |
24+ |
TO-247 |
12300 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
FAIRCHILD/仙童 |
23+ |
TO |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) |
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