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12N60C3D

24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE

TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G12N60C3D

UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode24A,600V

TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon?stateconductionlossofabipolartransistor.Themuch loweron?statevoltagedropvariesonlymoder

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HGTG12N60C3D

UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode24A,600V

TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon?stateconductionlossofabipolartransistor.Themuch loweron?statevoltagedropvariesonlymoder

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HGTG12N60C3D

24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE

TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG12N60C3D

24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

HGTG12N60C3D

24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

Description TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarieso

HARRIS

Harris Corporation

HGTP12N60C3

24A,600V,UFSSeriesN-ChannelIGBTs

TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP12N60C3

24A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTP12N60C3,HGT1S12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchl

HARRIS

Harris Corporation

HGTP12N60C3

24A,600V,UFSSeriesN-ChannelIGBTs

TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

HGTP12N60C3D

24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP12N60C3D

24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee

Intersil

Intersil Corporation

P12N60C3

24A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTP12N60C3,HGT1S12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchl

HARRIS

Harris Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    HGTP12N60C3R

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
N/A
56000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
FAIRCHILD
23+
TO-220
9526
詢價(jià)
Intersil
24+
TO-220
8866
詢價(jià)
仙童/INTERS
2023+
TO-220
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
INTERSIL
TO-220
22+
6000
十年配單,只做原裝
 詢價(jià)
INTERSIL
23+
TO-220
6000
原裝正品，支持實(shí)單
 詢價(jià)
仙童/INTERSI
23+
TO-220
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
仙童/INTERSI
23+
TO-220
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
INTERSIL
24+
TO-TO-220
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
FAIRCHILD/仙童
23+
TO-220
12888
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
更多HGTP12N60C3R供應(yīng)商 更新時(shí)間2024-11-16 11:06:00

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