零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
4A180KHz36VBuckDCtoDCConverter | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
CurrentTransducer | LEMLEM Electronics (China) Co., Ltd. 萊姆電子萊姆(LEM)集團 | LEM | ||
CurrentTransducer | LEMLEM Electronics (China) Co., Ltd. 萊姆電子萊姆(LEM)集團 | LEM | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
HighPerformanceRelativeHumidityandTemperatureSensor | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensor Features Humidityrange:0to100RH Humidityaccuracy:±1.5RH,typical(HS3101, 10to90RH,25°C) Hydrophobicmembrane,IP67rating 14-bitresolution:0.01RH,typical Independentprogrammableresolutionsettings:8, 10,12,14bits FastRHresponsetime:1secondtimeconstant, typical(w | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensorwithDigitalOutput Features ■Humidityrange:0to100RH ■Automotivegrade,AEC-Q100qualified,Grade2, -40°Cto+105°C ■Industrialgrade,JEDECqualified,-40°Cto +125°C ■DigitalI2CoutputwithCRCchecksum ■RHaccuracy:±1.5RH,typical(HS4001) ■14-bitresolution:0.04RH,typical ■Independentpro | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensor Features ?Humidityrange:0to100RH ?Humidityaccuracy:±1.5RH,typical(HS3101, 10to90RH,25°C) ?Hydrophobicmembrane,IP67rating ?14-bitresolution:0.01RH,typical ?Independentprogrammableresolutionsettings:8, 10,12,14bits ?FastRHresponsetime:1secondtimeconstant, | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensorModule Applications ■Climatecontrolsystems ■Homeappliances ■Weatherstations ■Industrialautomation ■Medicalequipment Features ■Humidityrange:0to100RH ■HumiSealcoatingformoistureprotection ■Humidityaccuracy:±1.5RH,typical ■14-bitresolution:0.01RH,typical ■Indep | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Half-BridgeFredFETandIntegratedDriver Description TheIR3103isagatedriverICintegratedwithahalfbridgeFredFETdesignedformotordriveapplicationsupto180W(heatsink-less).Thesleekandcompactsingle-in-linepackageisoptimizedforelectronicmotorcontrolinapplianceapplicationssuchasfansandcompressorsforrefr | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET | InterFET InterFET Corporation | InterFET | ||
PowerMOSFET(Vdds=30V,Rds(on)=12mohm,Id=64A) Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=12mohm,Id=64A) Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
HAIER原裝正品專賣價 |
23+ |
QFP-48 |
12000 |
專注原裝正品現(xiàn)貨特價中量大可定 |
詢價 | ||
HAIER |
2016+ |
QFP |
2500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
ALI |
16+ |
TQFP |
2500 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | ||
HITACHI |
23+ |
BGA |
8659 |
原裝公司現(xiàn)貨!原裝正品價格優(yōu)勢. |
詢價 | ||
Haier |
22+23+ |
QFP |
38994 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
Haier |
1844+ |
QFP |
6852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
HAIER |
10+ |
QFP |
6000 |
絕對原裝自己現(xiàn)貨 |
詢價 | ||
ALI |
2023+ |
TQFP |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
ALI |
24+ |
TQFP |
35200 |
一級代理/放心采購 |
詢價 | ||
Haier海 |
2022 |
QFP |
2500 |
全新原裝現(xiàn)貨熱賣 |
詢價 |
相關(guān)規(guī)格書
更多- HI3-200-5
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相關(guān)庫存
更多- HI3-201-5
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