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首頁 >HI630AA>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
HIRF630	文件：53.3 Kbytes Page：5 Pages	N-ChannelMOSFETs	HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司	HSMC
HM630	文件：1.50981 Mbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
HS-630	文件：297.5 Kbytes Page：2 Pages	CrystalClockOscillators	NEL Nel Frequency Controls,inc	NEL
I630	文件：53.8 Kbytes Page：3 Pages	5mmx7mmCeramicPackageSMDVCXO,LVCMOS/LVPECL/LVDS	ILSI ILSI America LLC	ILSI
I630	文件：1.35377 Mbytes Page：11 Pages	9A200VN-channelEnhancementModePowerMOSFET 1Description TheseN-channelEnhancedVDMOSFETs,isobtainedby theself-alignedplanartechnologywhichreducethe conductionloss,improveswitchingperformanceand enhancetheavalancheenergy.Whichaccordswiththe RoHSstandard. 2Features ●FastSwitching ●LowONResistance(Rdso	WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司	WXDH
IIRF630N	文件：339.05 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPC-630	文件：577.13 Kbytes Page：2 Pages	NewGeneration4U15-SlotRackmountChassis	ADVANTECHAdvantech Co., Ltd. 研華科技研華科技（中國）有限公司	ADVANTECH
IRC630	文件：229.76 Kbytes Page：8 Pages	PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=9.0A)	IRF International Rectifier	IRF
IRC630PBF	文件：1.17749 Mbytes Page：9 Pages	HEXFETPOWERMOSFET HEXFET?PowerMOSFET	IRF International Rectifier	IRF
IRF630	文件：97.84 Kbytes Page：9 Pages	N-channelTrenchMOStransistor GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
IRF630	文件：104.75 Kbytes Page：9 Pages	N-CHANNEL200V-0.35ihm-9A-TO-220/FPMESHOVERLAY]MOSFET Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Generalfeatures ■Extremelyhighdv/dtcapability ■Verylowintrinsic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
IRF630	文件：62.35 Kbytes Page：7 Pages	9A,200V,0.400Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	Intersil Intersil Corporation	Intersil
IRF630	文件：177.14 Kbytes Page：6 Pages	N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF630	文件：190.54 Kbytes Page：6 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25? ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACHTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCO	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
IRF630	文件：141.99 Kbytes Page：1 Pages	PowerMOSFET PowerMOSFET VDSS=200V,RDS(on)=0.40ohm,ID=9.0A	TEL TRANSYS Electronics Limited	TEL
IRF630	文件：137 Kbytes Page：6 Pages	POWERMOSFET GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆Dynamicdv/dtRating ◆RepetitiveAvalancheRated ◆FastSwitching ◆EaseofParalleling ◆SimpleDrive	SUNTAC Suntac Electronic Corp.	SUNTAC
IRF630	文件：94.84 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSFET Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconvert	A-POWERAdvanced Power Electronics Corp. 富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司	A-POWER
IRF630	文件：336.19 Kbytes Page：14 Pages	N-channel200V-0.35廓-9ATO-220/TO-220FPMeshoverlay??IIPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
IRF630	文件：579.72 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF630	文件：206.32 Kbytes Page：2 Pages	TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET Description Designedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. Features RepetitiveAvalancheRated FastSwitching EaseofParalleling SimpleDriveRequirements	DCCOM Dc Components	DCCOM

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型號：
HI630AA
制造商：
Hubbell Wiring Device-Kellems
功能描述：
P-CORD, HI-IMPACT,6,BK,RJ45-RJ45,30'

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市凌旭科技有限公司	HI6331RBC	HI	2016+	BGA	1800	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
深圳市鵬和科技有限公司	HI6331RBC	HI	24+	BGA	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	HI6331RBC	HI	1844+	BGA	6852	只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!	詢價(jià)
深圳兆威電子有限公司	HI6331RBC	海思	22+	BGA	42469	原裝正品現(xiàn)貨	詢價(jià)
深圳市盈宏半導(dǎo)體科技有限公司	HI6331RBC	HI	10+PB	BGA	84	剛到現(xiàn)貨加微13425146986	詢價(jià)
深圳市納艾斯科技有限公司	HI6331RBC	海思	2018+	BGA	6000	全新原裝正品現(xiàn)貨,假一賠佰	詢價(jià)
深圳市拓億芯電子有限公司	HI6331RBC	海思	23+	BGA	30000	全新原裝,假一賠十,價(jià)格優(yōu)勢	詢價(jià)
深圳市澳億芯電子科技有限公司	Hi6331RBC	Hi	1351	BGA	234	普通	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	HI6331RBC	HI	23+	BGA	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市富誠威科技有限公司	HI6331RBC	HISILICON/海思	22+	BGA	3785	絕對原裝公司現(xiàn)貨!	詢價(jià)

更多HI630AA供應(yīng)商更新時(shí)間2025-1-8 22:58:00

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