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HM3710K

N-Channel Enhancement Mode Power MOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IIRF3710

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIRF3710Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIRFP3710

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FullyAvalancheRated ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤25m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIRFR3710Z

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤18m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IR3710MTRPBF

WIDEINPUTANDOUTPUT,SYNCHRONOUSBUCKREGULATOR

IRF

International Rectifier

IR3710MTRPBF

WIDEINPUTANDOUTPUT,SYNCHRONOUSBUCKREGULATOR

IRF

International Rectifier

IRDC3710-DF

USERGUIDEFORIRDC3710-DFEVALUATIONBOARD

IRF

International Rectifier

IRDC3710-QFN

USERGUIDEFORIRDC3710-QFNEVALUATIONBOARD

IRF

International Rectifier

IRF3710

PowerMOSFET(Vdss=100V,Rds(on)=23mohm,Id=57A)

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF3710

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3710

N-ChannelPowerMOSFET(100V/59A)

FS

First Silicon Co., Ltd

IRF3710

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3710L

PowerMOSFET(Vdss=100V,Rds(on)=0.025ohm,Id=57A)

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710L

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3710LPBF

HEXFET?PowerMOSFET(VDSS=100V,RDS(on)=23m廓,ID=57A)

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710PBF

HEXFETPowerMOSFET

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710PBF

57A,100VHeatsinkPlanarN-ChannelPowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRF3710S

PowerMOSFET(Vdss=100V,Rds(on)=0.025ohm,Id=57A)

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
HAR
2016+
DIP
6523
只做原裝正品現(xiàn)貨!或訂貨!
詢價
HARRIS
24+
DIP-16
94
詢價
HM3-7603-5
8
8
詢價
Harris
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
詢價
HAR
23+
DIP16
1
全新原裝正品現(xiàn)貨,支持訂貨
詢價
進口原裝
23+
DIP24
1110
全新原裝現(xiàn)貨
詢價
har
2020+
PDIP
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
HAR
2122+
PDIP
11190
全新原裝正品現(xiàn)貨,優(yōu)勢渠道可含稅,假一賠十
詢價
HAR
23+
PDIP
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
HAR
22+
PDIP
12245
現(xiàn)貨,原廠原裝假一罰十!
詢價
更多HM3710K供應(yīng)商 更新時間2025-1-10 15:54:00