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IRF3710S

Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710S

Isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3710SPBF

HEXFET? Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710STRLPBF

Advanced Process Technology

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710STRRPBF

HEXFET? Power MOSFET

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710SPBF_15

Advanced Process Technology

IRF

International Rectifier

IRF3710Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRF3710Z

AdvancedProcessTechnologyUltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3710Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3710Z

N-ChannelEnhancementModeMOSFET

Description TheIRF3710Zusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgat echarge.Itcanbeusedinawidevarietyof applications. GeneralFeatures VDS=100V,ID=60A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF3710S

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET N-CH 100V 57A 3-Pin(2+Tab) D2PAK

  • 功能描述：

    MOSFET N D2-PAK

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
SOT-263
2000
原裝正品,歡迎咨詢
 詢價
IR
22+
D2-PAK
9450
原裝正品，實單請聯(lián)系
 詢價
IR
17+
D2-Pak
31518
原裝正品 可含稅交易
 詢價
IR
23+
TO263
35680
只做進口原裝QQ:373621633
 詢價
IR
17+13+
TO-263
1020
只做原裝正品
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
2015+
TO263
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR
06+
TO-263
20000
自己公司全新庫存絕對有貨
 詢價
IR
13+
TO-263
17238
原裝分銷
 詢價
IR
2002
199
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
更多IRF3710S供應(yīng)商 更新時間2025-1-21 16:00:00

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