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IRF3710STRLPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF3710STRLPBF規(guī)格書詳情
VDSS = 100V
RDS(on) = 23m?
ID = 57A
Description
Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
產(chǎn)品屬性
- 型號：
IRF3710STRLPBF
- 功能描述：
MOSFET MOSFT 100V 57A 23mOhm 86.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
TO-263 |
15677 |
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div> |
詢價 | ||
INFINEON |
23+ |
K-B |
48800 |
只有原裝,請來電咨詢 |
詢價 | ||
IR |
23+ |
TO263 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
05+ |
TO-263 |
8000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
2020+ |
TO-263 |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
INFINEON |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||||
INFINEON/IR |
1907+ |
NA |
2400 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
D2-PAK |
160075 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2023 |
TO-263-2 |
5200 |
公司原裝現(xiàn)貨/支持實單 |
詢價 | ||
NA |
23+ |
NA |
26094 |
10年以上分銷經(jīng)驗原裝進口正品,做服務(wù)型企業(yè) |
詢價 |
