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IRF520NSTRLPBF

Advanced Process Technology

IRF

International Rectifier

IRF520NSTRR

AdvancedProcessTechnology

IRF

International Rectifier

IRF520PBF

HEXFETPowerMOSFET

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF520PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF520S

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF520S

PowerMOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?175°COperatingTemperature ?FastSwitching ?EaseofParalleling ?Materialcategorization:fordefinitionsofcompliance

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF520SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF520V

PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF520VL

PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF520VLPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF520VPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF520VS

PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF520VSPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFI520A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI520A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFI520G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI520G

HEXFETPOWERMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri

IRF

International Rectifier

IRFI520G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI520GPBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri

IRF

International Rectifier

IRFI520GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Infineon Technologies
24+
D2PAK
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
Infineon(英飛凌)
23+
D2PAK
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價(jià)
INFINEON/英飛凌
23+/24+
TO263
9865
用芯服務(wù),原裝正品MOS(場效應(yīng)管)
詢價(jià)
IR
24+
TO-263
501293
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價(jià)
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
IR
23+
TO-263(D
7300
專業(yè)優(yōu)勢供應(yīng)
詢價(jià)
Infineon
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190
詢價(jià)
IR
2018+
TO263
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
詢價(jià)
NA
19+
74556
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
IR
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
更多IRF520NSTRLPBF供應(yīng)商 更新時(shí)間2024-12-23 20:18:00