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HN1B01FDW1T1

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features ?HighVoltageandHighCurrent:VCEO=50V,IC=200mA ?HighhFE:hFE=200~400 ?MoistureSensitivityLevel:1 ?ESDRating?HumanBodyModel:3A ?MachineModel:C ?Pb?F

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HN1B01FDW1T1G

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features ?HighVoltageandHighCurrent:VCEO=50V,IC=200mA ?HighhFE:hFE=200~400 ?MoistureSensitivityLevel:1 ?ESDRating?HumanBodyModel:3A ?MachineModel:C ?Pb?F

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HN1B01FDW1T1G

Complementary Dual General Purpose Amplifier Transistor

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features ?HighVoltageandHighCurrent:VCEO=50V,IC=200mA ?HighhFE:hFE=200~400 ?MoistureSensitivityLevel:1 ?ESDRating ?HumanBodyModel:3A ?MachineModel:C ?SPrefixforAutomo

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HN1B01FU

NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

HN1B01FU

SiliconNPNEpitaxialType(PCTProcess)AudioFrequencyGeneralPurposeAmplifierApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

HN1B01FU-GR

Audio-FrequencyGeneral-PurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

HN1B01FU-Y

Audio-FrequencyGeneral-PurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

HN1B01F-Y

Audio-FrequencyGeneral-PurposeAmplifierApplications

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

HPH1B01SGA

.050PINHEADERS.050[1.27]CENTERLINE

ADAM-TECHAdam Technologies, Inc.

亞當(dāng)科技亞當(dāng)科技股份有限公司

HPH1B01SGB

.050PINHEADERS.050[1.27]CENTERLINE

ADAM-TECHAdam Technologies, Inc.

亞當(dāng)科技亞當(dāng)科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    HN1B01FDW

  • 功能描述：

    兩極晶體管 - BJT 200mA 60V Dual Complementary

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON
24+
SC74-6
30000
只做原裝正品,假壹罰拾!
 詢(xún)價(jià)
onsemi(安森美)
23+
SC-74
3022
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢(xún)價(jià)
onsemi
24+
SC-74,SOT-457
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢(xún)價(jià)
ON
12+
SC74
3000
詢(xún)價(jià)
ON
24+
SOT353
762
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
INTERSIL
17+
SC74
9800
只做全新進(jìn)口原裝,現(xiàn)貨庫(kù)存
 詢(xún)價(jià)
VISHAY
23+
SOP-8
12000
全新原裝假一賠十
 詢(xún)價(jià)
ON進(jìn)口
23+
SC-74
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
 詢(xún)價(jià)
ON
23+
SC-74-6
63000
原裝正品現(xiàn)貨
 詢(xún)價(jià)
三年內(nèi)
1983
只做原裝正品
 詢(xún)價(jià)
更多HN1B01FDW供應(yīng)商 更新時(shí)間2025-3-10 14:17:00

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