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零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

HW1310ALPL

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HW1310BKPL

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HWCHAS1310AL

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HWCHAS1310BK

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HY1310D

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

華羿微電華羿微電子股份有限公司

HY1310U

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

華羿微電華羿微電子股份有限公司

HY1310V

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

華羿微電華羿微電子股份有限公司

IIRF1310N

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.036? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1310N

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310N

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.036? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1310NL

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NL

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1310NL

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1310NLPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NPBF

HEXFETPOWERMOSFET

IRF

International Rectifier

IRF1310NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF1310NS

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NS

FullyAvalancheRated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1310NS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1310NSPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

供應商型號品牌批號封裝庫存備注價格
Smiths Interconnect
21+
10
全新原裝鄙視假貨15118075546
詢價
HKE
2023+環(huán)?,F(xiàn)貨
專業(yè)繼電器
6800
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
詢價
HYOSUNG
40
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
HYOSUNG
24+
35200
一級代理/放心采購
詢價
HKE
2020+
DIP
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價
HKE/匯港
1736+
DIP
8529
專營繼電器只做原裝正品假一賠十!
詢價
匯港
20+
DIP
30500
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
匯港
20+
DIP其它繼電器
2890
只做原裝現(xiàn)貨繼電器
詢價
匯港
2023+
DIP
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
匯港
23+
DIP
5000
專注配單,只做原裝進口現(xiàn)貨
詢價
更多HRACT1310D供應商 更新時間2025-1-11 16:03:00