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首頁 >HRH13N50BNB>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
HRH13N50BNB	文件：2.89917 Mbytes Page：12 Pages	500V N-Channel Planar MOSFET Features RDSON=0.38Ω@Vgs=10V,Id=6.5A LowgateCharge(typical40.1nC) LowCrss(typical6.6pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad	SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司	SY
HRH13N50BNF	文件：2.89917 Mbytes Page：12 Pages	500VN-ChannelPlanarMOSFET Features RDSON=0.38Ω@Vgs=10V,Id=6.5A LowgateCharge(typical40.1nC) LowCrss(typical6.6pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad	SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司	SY
HRH13N50BNP	文件：2.89917 Mbytes Page：12 Pages	500VN-ChannelPlanarMOSFET Features RDSON=0.38Ω@Vgs=10V,Id=6.5A LowgateCharge(typical40.1nC) LowCrss(typical6.6pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad	SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司	SY
HRH13N50BNV	文件：2.89917 Mbytes Page：12 Pages	500VN-ChannelPlanarMOSFET Features RDSON=0.38Ω@Vgs=10V,Id=6.5A LowgateCharge(typical40.1nC) LowCrss(typical6.6pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad	SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司	SY
HRH13N50BNW	文件：2.89917 Mbytes Page：12 Pages	500VN-ChannelPlanarMOSFET Features RDSON=0.38Ω@Vgs=10V,Id=6.5A LowgateCharge(typical40.1nC) LowCrss(typical6.6pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad	SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司	SY
HRH13N50BNX	文件：2.89917 Mbytes Page：12 Pages	500VN-ChannelPlanarMOSFET Features RDSON=0.38Ω@Vgs=10V,Id=6.5A LowgateCharge(typical40.1nC) LowCrss(typical6.6pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad	SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司	SY
HY13N50FT	文件：150.24 Kbytes Page：4 Pages	500V/13AN-ChannelEnhancementModeMOSFET	HY HY ELECTRONIC CORP.	HY
HY13N50T	文件：150.24 Kbytes Page：4 Pages	500V/13AN-ChannelEnhancementModeMOSFET	HY HY ELECTRONIC CORP.	HY
IRF13N50	文件：340.33 Kbytes Page：7 Pages	N-ChannelPowerMOSFET	NELLSEMINell Semiconductor Co., Ltd 尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司	NELLSEMI
IRFB13N50A	文件：328.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFB13N50A	文件：2.67683 Mbytes Page：7 Pages	PowerMOSFET FEATURES ?LowerGateChargeQgResultsinSimplerDrive Reqirements ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSupp	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFB13N50A	文件：97.08 Kbytes Page：8 Pages	PowerMOSFET(Vdss=500V,Rds(on)max=0.450ohm,Id=14A) SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent Applications ●SwitchModePowerSupply(SMPS) ●UninterruptiblePowerSupply ●High	IRF International Rectifier	IRF
IRFB13N50A	文件：156.42 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFB13N50A	文件：167.49 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFB13N50APBF	文件：181.42 Kbytes Page：8 Pages	SMPSMOSFET SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent Applications ●SwitchModePowerSupply(SMPS) ●UninterruptiblePowerSupply ●High	IRF International Rectifier	IRF
IRFB13N50APBF	文件：156.42 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFB13N50APBF	文件：167.49 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IXFC13N50	文件：512.85 Kbytes Page：2 Pages	HiPerFETMOSFETISOPLUS220	IXYS IXYS Corporation	IXYS
IXFC13N50	文件：323.92 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFH13N50	文件：82.77 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市瑞新盛科技有限公司	HRH13N50BNF	HRMICRO/華瑞微	24+	TO-220F	5000	原裝正品保障優(yōu)勢(shì)供應(yīng)	詢價(jià)

更多HRH13N50BNB供應(yīng)商更新時(shí)間2024-11-18 9:36:00

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