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IRFB13N50A

Power MOSFET

FEATURES ?LowerGateChargeQgResultsinSimplerDrive Reqirements ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSupp

KERSEMI

Kersemi Electronic Co., Ltd.

IRFB13N50A

Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A)

SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent Applications ●SwitchModePowerSupply(SMPS) ●UninterruptiblePowerSupply ●High

IRF

International Rectifier

IRFB13N50A

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB13N50A

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB13N50A

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB13N50APBF

SMPS MOSFET

SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent Applications ●SwitchModePowerSupply(SMPS) ●UninterruptiblePowerSupply ●High

IRF

International Rectifier

IRFB13N50A_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB13N50APBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB13N50APBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IXFC13N50

HiPerFETMOSFETISOPLUS220

IXYS

IXYS Corporation

IXFC13N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH13N50

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH13N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFJ13N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFJ13N50

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Lowprofile,highpowerpackage ?Longcreepandstrikedistances ?Easyup-gradepathforTO-220designs ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedIn

IXYS

IXYS Corporation

IXFM13N50

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM13N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM13N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTC13N50

PowerMOSFETISOPLUS220

PowerMOSFETISOPLUS220TM ElectricallyIsolatedBackSurface N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?SiliconchiponDirect-Copper-Bond substrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation

IXYS

IXYS Corporation

IXTC13N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IRFB13N50A

  • 功能描述：

    MOSFET N-Chan 500V 14 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
24+
TO-220
15000
全新原裝的現(xiàn)貨
 詢價(jià)
IR
23+
TO-220
65400
詢價(jià)
IR
23+
TO220
9526
詢價(jià)
IR
05+
原廠原裝
50051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
24+
TO-220AB
8866
詢價(jià)
IR
23+
TO-220
9980
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
23+
TO-220
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
IR
TO220
20
現(xiàn)貨庫存
 詢價(jià)
IR/VISHAY
20+
TO-220
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價(jià)
更多IRFB13N50A供應(yīng)商 更新時(shí)間2024-11-13 14:32:00

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