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HX6408KEFM

512k x 8 STATIC RAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KEFN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KEHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KEHN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KENM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KENN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KERM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KERN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KQFM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KQFN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KQHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KQHN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KQNM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KQNN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KQRM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KQRN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KSFM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KSFN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KSHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KSHN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

詳細(xì)參數(shù)

  • 型號(hào):

    HX6408KEFM

  • 制造商:

    HONEYWELL

  • 制造商全稱:

    Honeywell Solid State Electronics Center

  • 功能描述:

    512k x 8 STATIC RAM

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HONYWELL
15+
原廠封裝
5
宇航IC只做原裝假一罰十
詢價(jià)
HONYWELL
24+
N/A
90000
原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價(jià)格合理
詢價(jià)
HONYWELL
24+
5
全新原裝
詢價(jià)
HONYWELL
18+
原廠原裝假一賠十
18
原廠很遠(yuǎn)現(xiàn)貨很近,找現(xiàn)貨選星佑電子,原廠原裝假一賠
詢價(jià)
HONYWELL
2022+
5
只做原裝,價(jià)格優(yōu)惠,長(zhǎng)期供貨。
詢價(jià)
HONYWELL
23+
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
HUAXIN(華芯)
23+
SOT23
50000
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
詢價(jià)
HUAXIN(華芯)
23+
SOT23
6000
誠(chéng)信服務(wù),絕對(duì)原裝原盤
詢價(jià)
HUAXIN(華芯)
2021+
TO-92S
1414
詢價(jià)
EXPLORE
2021+
QFP
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
更多HX6408KEFM供應(yīng)商 更新時(shí)間2024-10-25 16:00:00