首頁 >HY57V561620FTP-HDR-C>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
4Banksx4Mx16BitSynchronousDRAM TheHY57V561620Tisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620isorganizedas4banksof4,194,304x16. TheHY57V561620Tisofferingfullysynchronousoperationreferencedtoapo | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導體 | Hynix |
詳細參數(shù)
- 型號:
HY57V561620FTP-HDR-C
- 制造商:
SK Hynix Inc
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
HYNIX |
2016+ |
TSOP |
6528 |
只做進口原裝現(xiàn)貨!或訂貨,假一賠十! |
詢價 | ||
HYNIX |
TSOP54 |
2142 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
HYNIX |
15+ |
TSSOP |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應 |
詢價 | ||
進口原裝 |
23+ |
TSSOP |
1200 |
全新原裝 |
詢價 | ||
HYNIX |
16+ |
TSSOP |
8800 |
進口原裝大量現(xiàn)貨熱賣中 |
詢價 | ||
HYNIX |
17+ |
TSOP |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
HYNIX |
2016+ |
TSOP |
2000 |
只做原裝,假一罰十,公司優(yōu)勢內(nèi)存型號! |
詢價 | ||
HYNIX |
2020+ |
TSOP54 |
1963 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
HY |
2339+ |
TSOP |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
HYNIX |
19+ |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 |
相關規(guī)格書
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相關庫存
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