HY57V641620HGT-8I中文資料海力士數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.

FEATURES

? Single 3.3±0.3V power supplyNote)

? All device pins are compatible with LVTTL interface

? JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch

? All inputs and outputs referenced to positive edge of system clock

? Data mask function by UDQM or LDQM

? Internal four banks operation

? Auto refresh and self refresh

? 4096 refresh cycles / 64ms

? Programmable Burst Length and Burst Type

- 1, 2, 4, 8 or Full page for Sequential Burst

- 1, 2, 4 or 8 for Interleave Burst

? Programmable CASLatency ; 2, 3 Clocks