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HY57V641620HGT-5

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-55

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-55I

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-5I

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-6

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-6I

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-7

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-7I

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-8

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-8I

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-H

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-HI

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-K

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-KI

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-P

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-PI

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-S

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V641620HGT-SI

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    HY57V641620HGT

  • 制造商:

    HYNIX

  • 制造商全稱:

    Hynix Semiconductor

  • 功能描述:

    4 Banks x 1M x 16Bit Synchronous DRAM

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
HY
24+
TSOP
26
詢價(jià)
HYNIX
2016+
TSOP
6523
房間原裝進(jìn)口現(xiàn)貨假一賠十
詢價(jià)
HYNIX
23+
SOP
5000
原裝正品,假一罰十
詢價(jià)
HYNIX
24+
TSOP-54
4650
詢價(jià)
HYNIX
19+
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
HY
22+23+
TSOP
36980
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
HY
2023+
TSOP
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
詢價(jià)
HYNIX
24+
TSOP54
35200
一級(jí)代理/放心采購
詢價(jià)
HYNIX
23+
TSOP-54
30000
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
詢價(jià)
HYNIX
24+
SOP
25500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價(jià)銷售
詢價(jià)
更多HY57V641620HGT供應(yīng)商 更新時(shí)間2025-1-10 10:50:00