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HY628100BLG-I

128K x8 bit 5.0V Low Power CMOS slow SRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導體

HM628100I

WideTemperatureRangeVersion8MSRAM(1024-kwordx8-bit)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HY628100A

128Kx8bitCMOSSRAM

DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused

HynixHynix Semiconductor

海力士海力士半導體

HY628100AG

128Kx8bitCMOSSRAM

DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused

HynixHynix Semiconductor

海力士海力士半導體

HY628100ALG

128Kx8bitCMOSSRAM

DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused

HynixHynix Semiconductor

海力士海力士半導體

HY628100ALLG

128Kx8bitCMOSSRAM

DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused

HynixHynix Semiconductor

海力士海力士半導體

HY628100B

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導體

HY628100B-E

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導體

HY628100B-I

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導體

HY628100BLG

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導體

HY628100BLG-E

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

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HY628100BLLG

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導體

HY628100BLLG-E

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導體

HY628100BLLG-I

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導體

詳細參數(shù)

  • 型號:

    HY628100BLG-I

  • 制造商:

    HYNIX

  • 制造商全稱:

    Hynix Semiconductor

  • 功能描述:

    128K x8 bit 5.0V Low Power CMOS slow SRAM

供應商型號品牌批號封裝庫存備注價格
HYNIX
2016+
SOP
6000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
HYNIX
20+
SOP
2960
誠信交易大量庫存現(xiàn)貨
詢價
HY
21+
SOP
10000
原裝現(xiàn)貨假一罰十
詢價
HY
23+
SOP
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
詢價
HY
SOP
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
詢價
HYNIX
22+
SOP
8000
原裝正品支持實單
詢價
23+
SOP
39288
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術
詢價
HYUNDAI
23+
TSSOP-32
3964
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價
HYUNDAI
2023+環(huán)?,F(xiàn)貨
原廠封裝
4425
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
詢價
HY
24+
SOP
300
詢價
更多HY628100BLG-I供應商 更新時間2025-1-18 11:56:00