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首頁 >HY628100BLLG-E>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
HY628100BLLG-E	文件：175.71 Kbytes Page：10 Pages	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HM628100I	文件：91.14 Kbytes Page：17 Pages	WideTemperatureRangeVersion8MSRAM(1024-kwordx8-bit)	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
HY628100A	文件：128 Kbytes Page：9 Pages	128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100AG	文件：128 Kbytes Page：9 Pages	128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100ALG	文件：128 Kbytes Page：9 Pages	128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100ALLG	文件：128 Kbytes Page：9 Pages	128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100B	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100B-E	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100B-I	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100BLG	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100BLG-E	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100BLG-I	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100BLLG	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100BLLG-I	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix

詳細參數(shù)

型號：
HY628100BLLG-E
制造商：
HYNIX
制造商全稱：
Hynix Semiconductor
功能描述：
128K x8 bit 5.0V Low Power CMOS slow SRAM

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市芯誠實創(chuàng)科技有限公司	HY628100BLLP-55	HYUNDAI	2022	DIP-32	9885	全新原裝現(xiàn)貨	詢價
深圳市柯爾基電子有限公司	HY628100BLLP-55	HYUNDAI	23+24	DIP-32	9680	原盒原標.進口原裝.支持實單 .價格優(yōu)勢	詢價
深圳市昊創(chuàng)電子有限公司	HY628100BLLT	HYNIX/海力士	1824+	TSOP	4950	原裝現(xiàn)貨專業(yè)代理,可以代拷程序	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	HY628100BLLT	HYNIX/海力士	23+	TSOP	3965	一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、	詢價
深圳市佳鑫美電子科技有限公司	HY628100BLLT1	HYNIX	24+	TSOP32	2650	原裝優(yōu)勢!絕對公司現(xiàn)貨	詢價
上海意淼電子科技有限公司	HY628100BLLT155	N/A	23+	NA	12000	全新原裝假一賠十	詢價
深圳市一線半導(dǎo)體有限公司	HY628100BLLT1-55	HY	24+	TSOP	94		詢價
深圳市星佑電子有限公司	HY628100BLLT1-55	HY	06+	TSOP	1000	全新原裝絕對有貨	詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	HY628100BLLT1-55	現(xiàn)代	23+	SOP-16	5000	原裝正品,假一罰十	詢價
深圳市博浩通科技有限公司	HY628100BLLT1-55	Hyinx	23+	TSOP-32	8890	價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢	詢價

更多HY628100BLLG-E供應(yīng)商更新時間2025-1-3 10:02:00

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