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IC61LV6416-10KI

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-10T

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-10TI

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10B

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10BI

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10BI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-10BLI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-10K

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10K

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-10KI

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10KI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-10KLI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-10T

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-10T

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10TI

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10TI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-10TL

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-10TLI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
ICSI
2016+
SOJ44
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
ICSI
2016+
SOJ44
6523
只做進口原裝現(xiàn)貨!假一賠十!
詢價
ISSI
2020+
SOJ44
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
ICSI
2023+
SOJ44
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
ICSI
24+
SOJ44
35200
一級代理/放心采購
詢價
ICSI
23+
SOJ44
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
ICSI
21+
SOJ44
10000
原裝現(xiàn)貨假一罰十
詢價
ICSI
2022
SOJ44
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
ISSI
22+
1000
原廠原裝,價格優(yōu)勢!13246658303
詢價
ICSI
23+
SOJ44
9990
原裝正品,支持實單
詢價
更多IC61LV6416-10KG供應(yīng)商 更新時間2025-1-18 11:56:00