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IDT70P35中文資料IDT數(shù)據(jù)手冊(cè)PDF規(guī)格書

IDT70P35
廠商型號(hào)

IDT70P35

參數(shù)屬性

IDT70P35 封裝/外殼為576-BBGA,F(xiàn)CBGA;包裝為托盤;類別為集成電路(IC) > 存儲(chǔ)器;產(chǎn)品描述:IC SRAM 9MBIT PARALLEL 576FCBGA

功能描述

HIGH-SPEED 1.8V 8/4K x 18 DUAL-PORT, 8/4K x 16 DUAL-PORT STATIC RAM

文件大小

293.92 Kbytes

頁(yè)面數(shù)量

22 頁(yè)

生產(chǎn)廠商 Integrated Device Technology, Inc.
企業(yè)簡(jiǎn)稱

IDT

中文名稱

Integrated Device Technology, Inc.官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2024-11-17 15:50:00

IDT70P35規(guī)格書詳情

Description

The IDT70P35/34L (IDT70P25/24L) is a high-speed 8/4K x 18 (8/4K x 16) Dual-Port Static RAM. The IDT70P35/34L (IDT70P25/24L) is designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 36-bit (32-bit) or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.

Features

◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location

◆ High-speed access

IDT70P35/34L (IDT70P25/24L)

– Commercial: 20/25ns (max.)

– Industrial: 25ns (max.)

◆ Low-power operation

IDT70P35/34L (IDT70P25/24L)

Active: 30.6mW (typ.)

Standby: 5.4mW (typ.)

◆ Separate upper-byte and lower-byte control for multiplexed bus compatibility

◆ IDT70P35/34L (IDT70P25/24L) easily expands data bus width to 36 bits (32 bits) or more using the Master/Slave select when cascading more than one device

◆ M/S = VIH for BUSY output flag on Master M/S = VIL for BUSY input on Slave

◆ BUSY and Interrupt Flag

◆ On-chip port arbitration logic

◆ Full on-chip hardware support of semaphore signaling between ports

◆ Fully asynchronous operation from either port

◆ LVTTL-compatible, single 1.8V (±100mV) power supply

◆ Available in a 100-pin Thin Quad Flatpack (TQFP) package, 100-pin 0.8mm pitch Ball Grid Array (fpBGA), and 100-pin 0.5mm pitch BGA (fpBGA)

◆ Industrial temperature range (-40°C to +85°C) is available for selected speeds

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IDT70P3517S233RMI

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤

  • 存儲(chǔ)器類型:

    易失

  • 存儲(chǔ)器格式:

    SRAM

  • 技術(shù):

    SRAM - 雙端口,同步 QDR II

  • 存儲(chǔ)容量:

    9Mb(256K x 36)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 電壓 - 供電:

    1.7V ~ 1.9V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    576-BBGA,F(xiàn)CBGA

  • 供應(yīng)商器件封裝:

    576-FCBGA(25x25)

  • 描述:

    IC SRAM 9MBIT PARALLEL 576FCBGA

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