首頁(yè)>IDT70P3537S233RM>規(guī)格書詳情

IDT70P3537S233RM中文資料IDT數(shù)據(jù)手冊(cè)PDF規(guī)格書

IDT70P3537S233RM
廠商型號(hào)

IDT70P3537S233RM

參數(shù)屬性

IDT70P3537S233RM 封裝/外殼為576-BBGA,F(xiàn)CBGA;包裝為托盤;類別為集成電路(IC) > 存儲(chǔ)器;產(chǎn)品描述:IC SRAM 18MBIT PAR 576FCBGA

功能描述

512K/256K x36 SYNCHRONOUS DUAL QDR-II

文件大小

873.39 Kbytes

頁(yè)面數(shù)量

20 頁(yè)

生產(chǎn)廠商 Integrated Device Technology, Inc.
企業(yè)簡(jiǎn)稱

IDT

中文名稱

Integrated Device Technology, Inc.官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-11-17 15:30:00

IDT70P3537S233RM規(guī)格書詳情

Functional Description

As a memory standard, the (Quad Data Rate) QDR-II SRAM interface has become increasingly common in high performance networking systems. With the QDR-II interface/configuration, memory throughput is increased without increasing the clock rate via the use of two unidirectional buses on each of providing 2 ports of QDR-II makes this a Dual-QDRII Static Ram two ports to transfer data without the need for bus turnaround.

Features

◆ 18Mb Density (512K x 36)

– Also available 9Mb Density (256K x 36)

◆ QDR-II x 36 Burst-of-2 Interface

– Commercial: 233MHz, 250MHz

◆ Two independent ports

– True Dual-Port Access to common memory

◆ Separate, Independent Read and Write Data Buses on each Port

– Supports concurrent transactions

◆ Two-Word Burst on all DPRAM accesses

◆ DDR (Double Data Rate) Multiplexed Address Bus

– One Read and One Write request per clock cycle

◆ DDR (Double Data Rate) Data Buses

– Four word burst data (Two Read and Two Write) per clock on each port

– Four word transfers each of Read & Write per clock cycle per port (four word bursts on 2 ports)

◆ Octal Data Rate

◆ Port Enable pins (E0,E1) for depth expansion

◆ Dual Echo Clock Output with DLL-based phase alignment

◆ High Speed Transceiver Logic inputs

– scaled to receive signals from 1.4V to 1.9V

◆ Scalable output drivers

– Drives HSTL, 1.8V TTL or any voltage level from 1.4V to 1.9V

– Output impedance adjustable from 35 ohms to 70 ohms

◆ 1.8V Core Voltage (VDD)

◆ 576-ball Flip Chip BGA (25mm x 25mm, 1.0mm ball pitch)

◆ JTAG Interface - IEEE 1149.1 Compliant

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IDT70P3537S233RM

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤

  • 存儲(chǔ)器類型:

    易失

  • 存儲(chǔ)器格式:

    SRAM

  • 技術(shù):

    SRAM - 雙端口,同步 QDR II

  • 存儲(chǔ)容量:

    18Mb(512K x 36)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 電壓 - 供電:

    1.7V ~ 1.9V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    576-BBGA,F(xiàn)CBGA

  • 供應(yīng)商器件封裝:

    576-FCBGA(25x25)

  • 描述:

    IC SRAM 18MBIT PAR 576FCBGA

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
Renesas Electronics America In
24+
576-BBGA FCBGA
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
IDT
24+
576-FCBGA
3160
原裝現(xiàn)貨
詢價(jià)
IDT, Integrated Device Techno
23+
576-FCBGA25x25
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
IDT, Integrated Device Technol
21+
90-TFBGA
5280
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
詢價(jià)
IDT
23+
576-FCBGA(25x25)
1389
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
詢價(jià)
IDT
22+
576FCBGA
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IDT
21+
576FCBGA
13880
公司只售原裝,支持實(shí)單
詢價(jià)
IDT, Integrated Device Technol
21+
576-FCBGA(25x25)
56200
一級(jí)代理/放心采購(gòu)
詢價(jià)
IDT, Integrated Device Techno
23+
576-FCBGA25x25
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)