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IDT70V7339S133BFI

HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

IDT

Integrated Device Technology, Inc.

70V7339S133BC

HIGH-SPEED3.3V512Kx18SYNCHRONOUSBANK-SWITCHABLEDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆512Kx18SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent8Kx18banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Indust

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7339S133BCG

HIGH-SPEED3.3V512Kx18SYNCHRONOUSBANK-SWITCHABLEDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V7339S133BCGI

HIGH-SPEED3.3V512Kx18SYNCHRONOUSBANK-SWITCHABLEDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V7339S133BCI

HIGH-SPEED3.3V512Kx18SYNCHRONOUSBANK-SWITCHABLEDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆512Kx18SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent8Kx18banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Indust

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7339S133BF

HIGH-SPEED3.3V512Kx18SYNCHRONOUSBANK-SWITCHABLEDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆512Kx18SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent8Kx18banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Indust

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7339S133BFG

HIGH-SPEED3.3V512Kx18SYNCHRONOUSBANK-SWITCHABLEDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V7339S133BFGI

HIGH-SPEED3.3V512Kx18SYNCHRONOUSBANK-SWITCHABLEDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V7339S133BFI

HIGH-SPEED3.3V512Kx18SYNCHRONOUSBANK-SWITCHABLEDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆512Kx18SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent8Kx18banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Indust

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT70V7339S133BC

HIGH-SPEED3.3V512Kx18SYNCHRONOUSBANK-SWITCHABLEDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

IDT

Integrated Device Technology, Inc.

IDT70V7339S133BCI

HIGH-SPEED3.3V512Kx18SYNCHRONOUSBANK-SWITCHABLEDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

IDT

Integrated Device Technology, Inc.

IDT70V7339S133BF

HIGH-SPEED3.3V512Kx18SYNCHRONOUSBANK-SWITCHABLEDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

IDT

Integrated Device Technology, Inc.

IDT70V7339S133DD

HIGH-SPEED3.3V512Kx18SYNCHRONOUSBANK-SWITCHABLEDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

IDT

Integrated Device Technology, Inc.

IDT70V7339S133DDI

HIGH-SPEED3.3V512Kx18SYNCHRONOUSBANK-SWITCHABLEDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

IDT

Integrated Device Technology, Inc.

詳細參數(shù)

  • 型號:

    IDT70V7339S133BFI

  • 功能描述:

    IC SRAM 9MBIT 133MHZ 208FBGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲器

  • 系列:

    -

  • 標準包裝:

    3,000

  • 系列:

    - 格式 -

  • 存儲器:

    EEPROMs - 串行

  • 存儲器類型:

    EEPROM

  • 存儲容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 線串口

  • 電源電壓:

    1.7 V ~ 5.5 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    8-SOIC(0.154,3.90mm 寬)

  • 供應商設備封裝:

    8-SOIC

  • 包裝:

    帶卷(TR)

供應商型號品牌批號封裝庫存備注價格
IDT
23+
208-CABGA(15x15)
36430
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
詢價
IDT
23+
208FPBGA
9526
詢價
IDT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IDT
22+
208CABGA (15x15)
9000
原廠渠道,現(xiàn)貨配單
詢價
IDT
21+
208CABGA (15x15)
13880
公司只售原裝,支持實單
詢價
IDT
23+
208CABGA (15x15)
9000
原裝正品,支持實單
詢價
IDT, Integrated Device Technol
24+
144-TQFP(20x20)
56200
一級代理/放心采購
詢價
IDT
20+
QFP-144
1001
就找我吧!--邀您體驗愉快問購元件!
詢價
IDT
1923+
QFP
488
原盒原包裝只有原裝假一罰十價優(yōu)!
詢價
IDT
NA
5650
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
詢價
更多IDT70V7339S133BFI供應商 更新時間2025-1-3 16:30:00