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IDT71V2576YS150PF

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

IDT71V2576YS150PF

包裝:托盤(pán) 封裝/外殼:100-LQFP 類(lèi)別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 4.5MBIT PARALLEL 100TQFP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT71V2576YS150PFI

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

IDT71V2576YS150PFG

包裝:托盤(pán) 封裝/外殼:100-LQFP 類(lèi)別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 4.5MBIT PARALLEL 100TQFP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT71V2576YS150PFG8

包裝:托盤(pán) 封裝/外殼:100-LQFP 類(lèi)別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 4.5MBIT PARALLEL 100TQFP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V2576YS150BG

128KX36,256KX183.3VSynchronousSRAMs2.5VI/O,PipelinedOutputs,BurstCounter,SingleCycleDeselect

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighsystemspeed: CommercialandIndustrial: –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V2576YS150BGI

128KX36,256KX183.3VSynchronousSRAMs2.5VI/O,PipelinedOutputs,BurstCounter,SingleCycleDeselect

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighsystemspeed: CommercialandIndustrial: –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V2576YS150BQ

128KX36,256KX183.3VSynchronousSRAMs2.5VI/O,PipelinedOutputs,BurstCounter,SingleCycleDeselect

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighsystemspeed: CommercialandIndustrial: –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V2576YS150BQI

128KX36,256KX183.3VSynchronousSRAMs2.5VI/O,PipelinedOutputs,BurstCounter,SingleCycleDeselect

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighsystemspeed: CommercialandIndustrial: –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V2576YS150PF

128KX36,256KX183.3VSynchronousSRAMs2.5VI/O,PipelinedOutputs,BurstCounter,SingleCycleDeselect

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighsystemspeed: CommercialandIndustrial: –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V2576YS150PFI

128KX36,256KX183.3VSynchronousSRAMs2.5VI/O,PipelinedOutputs,BurstCounter,SingleCycleDeselect

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighsystemspeed: CommercialandIndustrial: –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V2576YS150BG

128KX36,256KX183.3VSynchronousSRAMs2.5VI/O,PipelinedOutputs,BurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V2576YS150BGI

128KX36,256KX183.3VSynchronousSRAMs2.5VI/O,PipelinedOutputs,BurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V2576YS150BQ

128KX36,256KX183.3VSynchronousSRAMs2.5VI/O,PipelinedOutputs,BurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V2576YS150BQI

128KX36,256KX183.3VSynchronousSRAMs2.5VI/O,PipelinedOutputs,BurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IDT71V2576YS150PF

  • 制造商:

    Renesas Electronics America Inc

  • 類(lèi)別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤(pán)

  • 存儲(chǔ)器類(lèi)型:

    易失

  • 存儲(chǔ)器格式:

    SRAM

  • 技術(shù):

    SRAM - 同步,SDR

  • 存儲(chǔ)容量:

    4.5Mb(128K x 36)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 電壓 - 供電:

    3.135V ~ 3.465V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類(lèi)型:

    表面貼裝型

  • 封裝/外殼:

    100-LQFP

  • 供應(yīng)商器件封裝:

    100-TQFP(14x14)

  • 描述:

    IC SRAM 4.5MBIT PARALLEL 100TQFP

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IDT
23+
100-TQFP(14x14)
9550
專(zhuān)業(yè)分銷(xiāo)產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
詢(xún)價(jià)
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢(xún)價(jià)
IDT, Integrated Device Technol
24+
100-TQFP(14x14)
56200
一級(jí)代理/放心采購(gòu)
詢(xún)價(jià)
IDT
20+
QFP-100
1001
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢(xún)價(jià)
IDT
22+
100TQFP
9000
原廠渠道,現(xiàn)貨配單
詢(xún)價(jià)
IDT
21+
100TQFP
13880
公司只售原裝,支持實(shí)單
詢(xún)價(jià)
IDT
23+
TQFP
10000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢(xún)價(jià)
IDT
23+
100TQFP
9000
原裝正品,支持實(shí)單
詢(xún)價(jià)
IDT, Integrated Device Techno
23+
100-TQFP14x14
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
詢(xún)價(jià)
IDT, Integrated Device Techno
23+
100-TQFP14x14
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
詢(xún)價(jià)
更多IDT71V2576YS150PF供應(yīng)商 更新時(shí)間2024-12-28 16:30:00