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IP123

3AMPPOSITIVEVOLTAGEREGULATORS

FEATURES ?0.04/VLINEREGULATION ?0.3/ALOADREGULATION ?THERMALOVERLOADPROTECTION ?SHORTCIRCUITPROTECTION ?SAFEOPERATINGAREAPROTECTION ?1TOLERANCE ?START–UPWITHNEGATIVEVOLTAGE(±SUPPLIES)ONOUTPUT ?AVAILABLEIN5V,12VAND15VOPTIONS

SEME-LAB

Seme LAB

IP123A

3AMPPOSITIVEVOLTAGEREGULATORS

FEATURES ?0.04/VLINEREGULATION ?0.3/ALOADREGULATION ?THERMALOVERLOADPROTECTION ?SHORTCIRCUITPROTECTION ?SAFEOPERATINGAREAPROTECTION ?1TOLERANCE ?START–UPWITHNEGATIVEVOLTAGE(±SUPPLIES)ONOUTPUT ?AVAILABLEIN5V,12VAND15VOPTIONS

SEME-LAB

Seme LAB

IPM-C123

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪訊

IPM-L123

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪訊

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF123

8.0Aand9.2A,80Vand100V,0.27and0.36Ohm,N-Channel,PowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF123

N-CHANNELPOWERMOSFETS

FEATURES ?LowRDs

SamsungSamsung semiconductor

三星三星半導體

IRF123

NanosecondSwitchingSpeeds

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF123

IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF123

N-ChannelPowerMosfets,

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFD123

1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

HARRIS

Harris Corporation

IRFD123

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching, ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?ForAutomaticInsertion

VishayVishay Siliconix

威世科技威世科技半導體

IRFD123

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg

VishayVishay Siliconix

威世科技威世科技半導體

IRFD123PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching, ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?ForAutomaticInsertion

VishayVishay Siliconix

威世科技威世科技半導體

IRFD123PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFF123

N-ChannelEnhancement-ModePowerMOSField-EffectTransistors

5.0Aand6.0A,60V-100VrDS(0n)=0.30Ωand0.40Ω Features: ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESS

GE Solid State

ISCNH123L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

J123F

ULFclassratedstandard

CIT

CIT Relay & Switch

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IR
14
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23+
TO252
8650
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2023+
3000
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FAIRCHILD
4000
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IRF
23+
NA
19960
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Industrial
1931+
N/A
18
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22+
NA
18
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24+
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52000
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IR
22+
SOT223
6000
終端可免費供樣,支持BOM配單
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IR
23+
SOT223
8000
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