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IRFD120

1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

HARRIS

Harris Corporation

IRFD120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecomb

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD120

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD120

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD120PBF

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultip

IRF

International Rectifier

IRFD120PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE120

HEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersthe

IRF

International Rectifier

IRFE120

SimpleDriveRequirements

IRF

International Rectifier

IRFF120

6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET

6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

Intersil

Intersil Corporation

IRFF120

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

Description TheHEXFET?technologyisthekeytoInternationalRectifier’sHiReladvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance. TheHEXFE

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
HARRIS
24+
TO-251
550
詢價(jià)
IR
22+
SOP-8
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
2023+環(huán)?，F(xiàn)貨
進(jìn)口原裝,熱賣庫存
2500
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價(jià)
IR
23+
SOP-8
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
2023+
SOP-8
50000
原裝現(xiàn)貨
 詢價(jià)
IR
23+
SOP-8
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
SOP-8
7000
詢價(jià)
IR
24+
SOP8
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價(jià)
IR
2025+
SOP8
3557
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價(jià)
Industrial
1931+
N/A
18
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更多IFU120供應(yīng)商 更新時(shí)間2025-4-17 10:50:00

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