IRFD120中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
IRFD120規(guī)格書詳情
FEATURES
? Dynamic dV/dt rating
? Repetitive avalanche rated
? For automatic insertion
? End stackable
? 175 °C operating temperature
? Fast switching
? Ease of paralleling
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1 pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
產(chǎn)品屬性
- 型號：
IRFD120
- 功能描述：
MOSFET 100V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
13 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ON |
23+ |
DIP |
6500 |
全新原裝假一賠十 |
詢價 | ||
INTERNATIONALRECTIFIER |
2020+ |
NA |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
0703+ |
DIP4 |
10 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR-VISHA |
1815+ |
DIP4 |
6528 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
MOT |
90/91 |
144 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
IR |
22+ |
DIP |
5000 |
詢價 | |||
IRFD120 |
163 |
163 |
詢價 | ||||
IR |
22+ |
DIP-4 |
2450 |
公司只做原裝!現(xiàn)貨供應(yīng)! |
詢價 |
