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IKCM15H60GA

Control Integrated POwer System

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKCM15H60GA_15

Control Integrated POwer System

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKCM15H60GA_16

Control Integrated POwer System

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKCM15H60GAXKMA2

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:24-PowerDIP 模塊(1.028",26.10mm) 類別:分立半導(dǎo)體產(chǎn)品 功率驅(qū)動器模塊 描述:IFPS MODULES 24MDIP

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKCM15H60HA

ControlIntegratedPOwerSystem

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

MBR15H60CT

DualSchottkyBarrierRectifiers

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBR15H60CT

PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0

KERSEMI

Kersemi Electronic Co., Ltd.

MBR15H60CT

DualCommonCathodeSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBR15H60CT

PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0

KERSEMI

Kersemi Electronic Co., Ltd.

MBR15H60CT

MechanicalData

KERSEMI

Kersemi Electronic Co., Ltd.

MBR15H60CT

DualCommon-CathodeSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBRB15H60CT

DualSchottkyBarrierRectifiers

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBRB15H60CT

DualCommon-CathodeSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBRF15H60CT

DualCommon-CathodeSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBRF15H60CT

DualSchottkyBarrierRectifiers

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

STGB15H60DF

Trenchgatefield-stopIGBT,Hseries600V,15Ahighspeed

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGF15H60DF

Trenchgatefield-stopIGBT,Hseries600V,15Ahighspeed

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP15H60DF

Trenchgatefield-stopIGBT,Hseries600V,15Ahighspeed

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGWT15H60F

Trenchgatefield-stopIGBT,Hseries600V,15Ahighspeed

Features ?Highspeedswitching ?Tightparameterdistribution ?Safeparalleling ?Lowthermalresistance ?Short-circuitrated Applications ?Motorcontrol ?UPS ?PFC Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.Th

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號:

    IKCM15H60GA

  • 功能描述:

    IGBT 模塊 Dual In-Line Intell. Pwr Module; 600V 15A

  • RoHS:

  • 制造商:

    Infineon Technologies

  • 產(chǎn)品:

    IGBT Silicon Modules

  • 配置:

    Dual 集電極—發(fā)射極最大電壓

  • VCEO:

    600 V

  • 集電極—射極飽和電壓:

    1.95 V 在25

  • C的連續(xù)集電極電流:

    230 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    445 W

  • 最大工作溫度:

    + 125 C

  • 封裝/箱體:

    34MM

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
INFINEON
22+
MDIP-24
2520
原裝正品,實(shí)單請聯(lián)系
詢價
24+
MDIP-24
5040
原裝現(xiàn)貨 支持實(shí)單
詢價
INFINEON
2405+
原廠封裝
76440
原裝正品,渠道可追溯
詢價
INFINEON
23+
NA
76440
公司現(xiàn)貨原裝
詢價
Infineon(英飛凌)
2023+
DIP-24
4550
全新原裝正品
詢價
Infineon(英飛凌)
23+
DIP-24
1104
深耕行業(yè)12年,可提供技術(shù)支持。
詢價
LS
19+
MODULE
1290
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126
詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
INFINEON
1822+
DIP
6852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
詢價
更多IKCM15H60GA供應(yīng)商 更新時間2024-12-23 14:40:00