首頁(yè) >IKD04N60RFA>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IKD04N60RFA | Optimized Eon, Eoff and Qrr for low switching losses | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
RC-DriveandRC-DriveFast | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
??C-DFast??RC-DrivesIGBToptimizedforhighswitchingfrequency | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NChannelMOSFET NChannelMOSFET ●RobustHighVoltageTermination ●AvalancheEnergySpecified ●Source-to-DrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode | STANSON Stanson Technology | STANSON | ||
N-ChannelEnhancementModeFieldEffectTransistor | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
N-ChannelEnhancementModeFieldEffectTransistor | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
SiliconN-ChannelPowerMOSFET | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 | CITC | ||
SiliconN-ChannelPowerMOSFET | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 | CITC | ||
N-ChannelPowerMOSFET1.8,600Volts | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-ChannelPowerMOSFET1.8,600Volts | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
N-ChannelPowerMOSFET1.8,600Volts | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.8A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelPowerMOSFET600V,2.0Ohm | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
詳細(xì)參數(shù)
- 型號(hào):
IKD04N60RFA
- 制造商:
Infineon Technologies AG
- 功能描述:
IGBT PRODUCTS - Tape and Reel
- 功能描述:
IGBT w/ INTG DIODE 600V 8A
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | |||
INFINEON |
23+ |
7000 |
詢價(jià) | ||||
Infineon Technologies |
21+ |
PG-TO252-3 |
2500 |
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))! |
詢價(jià) | ||
Infineon |
1931+ |
N/A |
2458 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物 |
詢價(jià) | ||
INFINEON |
1809+ |
TO252-3 |
3675 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
Infineon |
22+ |
NA |
493 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
Infineon Technologies |
22+ |
TO2523 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
Infineon Technologies |
21+ |
TO2523 |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
INFINEON/英飛凌 |
2021+ |
37500 |
十年專營(yíng)原裝現(xiàn)貨,假一賠十 |
詢價(jià) | |||
Infineon Technologies |
23+ |
TO2523 |
9000 |
原裝正品,支持實(shí)單 |
詢價(jià) |
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