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IMBG120R034M2H

Marking：12M2H034；Package：PG-TO263-7-U01；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDDC=43AatTC=100°C ?RDS(on)=34mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZC120R034M2H

CoolSiC?1200VSiCMOSFETG2:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features ?VDSS=1200VatTvj=25°C ?IDDC=39AatTC=100°C ?RDS(on)=34mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZC120R034M2H

CoolSiC?1200VSiCMOSFETG2:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features ?VDSS=1200VatTvj=25°C ?IDDC=39AatTC=100°C ?RDS(on)=34mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZC120R034M2H

CoolSiC?1200VSiCMOSFETG2:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features ?VDSS=1200VatTvj=25°C ?IDDC=39AatTC=100°C ?RDS(on)=34mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZC120R034M2H

CoolSiC?1200VSiCMOSFETG2:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features ?VDSS=1200VatTvj=25°C ?IDDC=39AatTC=100°C ?RDS(on)=34mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZC120R034M2H

CoolSiC?1200VSiCMOSFETG2:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features ?VDSS=1200VatTvj=25°C ?IDDC=39AatTC=100°C ?RDS(on)=34mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon
23+
PG-TO263-7
15500
英飛凌優(yōu)勢(shì)渠道全系列在售
 詢價(jià)
英飛凌
21+
PG-TO263-7
6000
絕對(duì)原裝現(xiàn)貨
 詢價(jià)
INFINEON
23+
PG-TO263-7
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
 詢價(jià)
Infineon(英飛凌)
23+
NA/
8735
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價(jià)
INFINEON
23+
GOOP
8000
只做原裝現(xiàn)貨
 詢價(jià)
INFINEON
23+
GOOP
7000
詢價(jià)
INFINEON/英飛凌
2021+
45000
十年專營(yíng)原裝現(xiàn)貨,假一賠十
 詢價(jià)
Infineon Technologies
23+
TO-247-7
3652
原廠正品現(xiàn)貨供應(yīng)SIC全系列
 詢價(jià)
Infineon(英飛凌)
23+
TO2637
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價(jià)
ST
2405+
原廠封裝
50000
15年芯片行業(yè)經(jīng)驗(yàn)/只供原裝正品:0755-83271729鄒小姐
 詢價(jià)
更多IMBG120R034M2H供應(yīng)商 更新時(shí)間2025-1-25 11:00:00

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