首頁(yè) >INA214CIRSWT>規(guī)格書(shū)列表

零件編號(hào)下載 訂購(gòu)功能描述/絲印制造商 上傳企業(yè)LOGO

INA214CIRSWT

Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

TI1Texas Instruments

德州儀器

INA214CIRSWT

Voltage Output, Low- or High-Side Measurement, Bidirectional

TI1Texas Instruments

德州儀器

IRFD214

PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=0.45A)

VDSS=250V RDS(on)=2.0? ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD214

PowerMOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V2.0 Qg(Max.)(nC)8.2 Qgs(nC)1.8 Qgd(nC)4.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD214

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD214PBF

HEXFETPowerMOSFET

VDSS=250V RDS(on)=2.0? ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD214PBF

PowerMOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V2.0 Qg(Max.)(nC)8.2 Qgs(nC)1.8 Qgd(nC)4.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL214

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL214

PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=0.79A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolder

IRF

International Rectifier

IRFL214

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Texas Instruments
24+
10-UFQFN
25000
in stock線(xiàn)性IC-原裝正品
 詢(xún)價(jià)
TI(德州儀器)
23+
QFN-10(1
1083
深耕行業(yè)12年,可提供技術(shù)支持。
 詢(xún)價(jià)
Texas Instruments
24+
10-UQFN(1.8x1.4)
53200
一級(jí)代理/放心采購(gòu)
 詢(xún)價(jià)
TI/德州儀器
23+
10-UQFN
3047
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
 詢(xún)價(jià)
TI(德州儀器)
1921+
UQFN-10(1.8x1.4)
3575
向鴻倉(cāng)庫(kù)現(xiàn)貨,優(yōu)勢(shì)絕對(duì)的原裝!
 詢(xún)價(jià)
TI(德州儀器)
2117+
UQFN-10(1.8x1.4)
315000
250個(gè)/圓盤(pán)一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)
 詢(xún)價(jià)
TI
20+
QFN-10
500
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢(xún)價(jià)
TI(德州儀器)
2021+
UQFN-10(1.8x1.4)
499
詢(xún)價(jià)
TI/德州儀器
22+
SON10
9000
原裝正品
 詢(xún)價(jià)
TI
22+
9000
原廠(chǎng)渠道,現(xiàn)貨配單
 詢(xún)價(jià)
更多INA214CIRSWT供應(yīng)商 更新時(shí)間2025-1-26 14:14:00

相關(guān)規(guī)格書(shū)

更多

相關(guān)庫(kù)存

更多