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IRFD214PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRFD214PBF
廠商型號(hào)

IRFD214PBF

功能描述

HEXFET Power MOSFET

文件大小

923.6 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-11-16 15:22:00

IRFD214PBF規(guī)格書詳情

VDSS = 250V

RDS(on) = 2.0?

ID = 0.45A

Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.

● Dynamic dv/dt Rating

● Repetitive Avalanche Rated

● For Automatic Insertion

● End Stackable

● Fast Switching

● Ease of paralleling

● Simple Drive Requirements

● Lead-free

產(chǎn)品屬性

  • 型號(hào):

    IRFD214PBF

  • 功能描述:

    MOSFET N-Chan 250V 0.45 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
IR
2020+
DIP-4
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
IR
2022+
DIP-4
8600
英瑞芯只做原裝正品
詢價(jià)
Vishay Siliconix
2022+
4-DIP(0.300
38550
詢價(jià)
IR
22+
SOT-4P
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
IR
23+
SOT-4P
8000
只做原裝現(xiàn)貨
詢價(jià)
IR
23+
SOT-4P
7000
詢價(jià)
IR
DIP-4
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
IR
22+
DIP-4
60620
1600
詢價(jià)
VishayIR
24+
4-DIP
2460
詢價(jià)
Vishay Siliconix
22+
4DIP
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)