IRFD210中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
相關(guān)芯片規(guī)格書(shū)
更多IRFD210規(guī)格書(shū)詳情
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Features
? 0.6A, 200V
? rDS(ON) = 1.500?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號(hào)：
IRFD210
- 功能描述：
MOSFET N-Chan 200V 0.6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
19+ |
6500 |
進(jìn)口原裝現(xiàn)貨 |
詢(xún)價(jià) | |||
IR |
23+ |
NA/ |
577 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
詢(xún)價(jià) | ||
MOT |
2016+ |
DIP4 |
1023 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢(xún)價(jià) | ||
IR |
23+ |
NA |
20000 |
全新原裝假一賠十 |
詢(xún)價(jià) | ||
IR |
2020+ |
DIP |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢(xún)價(jià) | ||
IR |
23+ |
QFP |
3200 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷(xiāo)售 |
詢(xún)價(jià) | ||
ir |
24+ |
500000 |
行業(yè)低價(jià),代理渠道 |
詢(xún)價(jià) | |||
HARRIS(哈利斯) |
23+ |
DIP4 |
6000 |
誠(chéng)信服務(wù)，絕對(duì)原裝原盤(pán) |
詢(xún)價(jià) | ||
IR |
2016+ |
DIP4 |
6528 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
詢(xún)價(jià) | ||
IR |
23+ |
DIP-4 |
9896 |
詢(xún)價(jià) |
