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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFD210	文件：173.36 Kbytes Page：6 Pages	Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A) DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedin	IRF International Rectifier	IRF
IRFD210	文件：52.32 Kbytes Page：6 Pages	0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc	Intersil Intersil Corporation	Intersil
IRFD210	文件：360.56 Kbytes Page：6 Pages	0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS TheseareadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching	HARRIS Harris Corporation	HARRIS
IRFD210	文件：1.6013 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD210	文件：843.37 Kbytes Page：9 Pages	Power MOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD210_V01	文件：843.37 Kbytes Page：9 Pages	Power MOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD210PBF	文件：1.79775 Mbytes Page：8 Pages	HEXFET Power MOSFET DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedin	IRF International Rectifier	IRF
IRFD210PBF	文件：1.6013 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD210PBF	文件：843.37 Kbytes Page：9 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFE210	文件：202.29 Kbytes Page：7 Pages	REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET-R??RANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners	IRF International Rectifier	IRF
IRFE210	文件：161.95 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFF210	文件：325.79 Kbytes Page：7 Pages	2.2A,200V,1.500Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	Intersil Intersil Corporation	Intersil
IRFF210	文件：130.84 Kbytes Page：7 Pages	REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe	IRF International Rectifier	IRF
IRFF210	文件：16.64 Kbytes Page：1 Pages	N-ChannelMOSFETinaHermeticallysealedTO39 N-ChannelMOSFETinaHermeticallysealedTO39MetalPackage. N-ChannelMOSFET. VDSS=200V ID=2.25A RDS(ON)=1.5?	SEME-LAB Seme LAB	SEME-LAB
IRFL210	文件：182.25 Kbytes Page：6 Pages	PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=0.96A) VDSS=200V,RDS(on)=1.5Ohm,ID=0.96A	IRF International Rectifier	IRF
IRFL210	文件：1.06848 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL210	文件：1.58503 Mbytes Page：7 Pages	SurfaceMount	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFL210	文件：171.96 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL210PBF	文件：782.91 Kbytes Page：9 Pages	HEXFET?PowerMOSFET VDSS=200V,RDS(on)=1.5Ohm,ID=0.96A Lead-Free	IRF International Rectifier	IRF
IRFL210PBF	文件：1.06848 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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詳細(xì)參數(shù)

型號：
IRFD210
功能描述：
MOSFET N-Chan 200V 0.6 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市龍瀚電子有限公司	IRFD210	IR	11+	DIP	62000	原裝正品現(xiàn)貨優(yōu)勢18	詢價(jià)
深圳市星佑電子有限公司	IRFD210	IR	05+	DIP-4	6000	自己公司全新庫存絕對有貨	詢價(jià)
深圳市聯(lián)世界科技有限公司	IRFD210	IR	9851		1208	原裝正品現(xiàn)貨庫存價(jià)優(yōu)	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	IRFD210	IR	2016+	DIP4	6528	只做進(jìn)口原裝現(xiàn)貨!假一賠十!	詢價(jià)
深圳市昌和盛利電子有限公司	IRFD210	IR	23+	DIP-4	9896		詢價(jià)
深圳市凌旭科技有限公司	IRFD210	MOT	2016+	DIP4	1023	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRFD210	IOR	24+	DIP-4P	79		詢價(jià)
深圳市博浩通科技有限公司	IRFD210	IR	23+	DIP-4	1200	全新原裝現(xiàn)貨	詢價(jià)
深圳市卓越微芯電子有限公司	IRFD210	IR	2020+	DIP-4	2180	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市歐立現(xiàn)代科技有限公司	IRFD210	har	24+	N/A	6980	原裝現(xiàn)貨,可開13%稅票	詢價(jià)

更多IRFD210供應(yīng)商更新時(shí)間2025-1-11 10:18:00

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