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IRFD210中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRFD210規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? For Automatic Insertion
? End Stackable
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
產(chǎn)品屬性
- 型號(hào):
IRFD210
- 功能描述:
MOSFET N-Chan 200V 0.6 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
65480 |
詢價(jià) | ||||
IR |
2020+ |
DIP |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
IR |
05+ |
DIP-4 |
6000 |
自己公司全新庫存絕對(duì)有貨 |
詢價(jià) | ||
IR |
23+ |
DIP-4 |
1200 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
9851 |
1208 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | |||
IR |
21+ |
DIP-4 |
5000 |
原裝現(xiàn)貨/假一賠十/支持第三方檢驗(yàn) |
詢價(jià) | ||
IR |
2022 |
DIP-4 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
IR |
23+ |
QFP |
3200 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR |
23+ |
DIP-4 |
10000 |
原裝正品現(xiàn)貨 |
詢價(jià) |