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IRFD214PBF中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
IRFD214PBF規(guī)格書詳情
VDS (V) 250
RDS(on) (Ω) VGS = 10 V 2.0
Qg (Max.) (nC) 8.2
Qgs (nC) 1.8
Qgd (nC) 4.5
Configuration Single
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? For Automatic Insertion
? End Stackable
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Lead (Pb)-free Available
產品屬性
- 型號：
IRFD214PBF
- 功能描述：
MOSFET N-Chan 250V 0.45 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
4475 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
2020+ |
DIP-4 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
22+23+ |
DIP-4 |
16406 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
DIP-4 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
1816+ |
DIP-4 |
6523 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價 | ||
VishayIR |
24+ |
4-DIP |
2460 |
詢價 | |||
IR |
22+ |
DIP-4 |
60620 |
1600 |
詢價 | ||
IR |
22+ |
SOT-4P |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
IR |
2022+ |
DIP-4 |
8600 |
英瑞芯只做原裝正品 |
詢價 |
