首頁(yè) >INA220AIDR>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HighorLowSide,Bi-DirectionalCURRENT/POWERMONITORwithTwo-WireInterface | TI1Texas Instruments 德州儀器 | TI1 | ||
HighorLowSide,Bi-DirectionalCURRENT/POWERMONITORwithTwo-WireInterface | TI1Texas Instruments 德州儀器 | TI1 | ||
High-orLow-Side,BidirectionalCurrentandPowerMonitor | TI1Texas Instruments 德州儀器 | TI1 | ||
High-orLow-Side,BidirectionalCurrentandPowerMonitor | TI1Texas Instruments 德州儀器 | TI1 | ||
CompactIndustrialComputerSystemwith10thGenIntel?Core?iCPUSocket(LGA1200) Features ?Intel?10thGenCore?iCPUsocket-type(LGA1200)withIntel?Q470E/ H420Echipset ?3xindependentdisplays(thirddisplayoutput(DP)viaoptionalcable) ?2xGigaLanand6xUSB3.2 ?2xRS-232/422/485and2xRS232serialports ?1xNVMeM.2(Q470EOnly),2x2.5HDD/SSD,a | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國(guó))有限公司 | ADVANTECH | ||
MachineVisionEdgeSolutionReadyPlatform Features ?IntuitiveGUIwithoutprogrammingskills ?Flexiblelicensingoptionsincludingfull,ID,alignment ?SupportsuptosixGigEvisioncameraswithupto20Mresolutioninmono andbayerformats ?Supportsconditionaloperator,externalAPIforadvancedapplications | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國(guó))有限公司 | ADVANTECH | ||
CompactIndustrialComputerSystemwith6th/7thGenIntel?Core?iCPUSocket(LGA1151) Features ?Intel?6th/7thGenCore?iCPUsocket-type(LGA1151)withIntel?Q170/ H110chipset ?3xindependentdisplays(thirddisplayoutput(DP)viaoptionalcable) ?2xGigaLanand6xUSB3.0(Q170)/4xUSB3.0(H110) ?2xRS-232/422/485and2xRS232serialports ?2x2.5HDD/SSD,a | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國(guó))有限公司 | ADVANTECH | ||
N-CHANNELPOWERMOSFETS FEATURES ?LowRDs | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
4.0Aand5.0A,150Vand200V,0.8and1.2Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
N-ChannelPowerMOSFETs,7A,150-200V N-ChannelPowerMOSFETs7A150-200V | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelPowerMosfets | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
NanosecondSwitchingSpeeds Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
HighSpeedApplications DESCRIPTION ?DrainCurrentID=5A@TC=25℃ ?DrainSourceVoltage-:VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.8Ω(Max) ?HighSpeedApplications APPLICATIONS ?Switchingpowersupplies | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
PowerMOSFET(Vdss=200V,Rds(on)=0.80ohm,Id=0.80A) HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
0.8A,200V,0.800Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
0.8A,200V,0.800Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllothesepowerMOSFETsaredesignedforapplicationssuchasswitchingr | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號(hào):
INA220AIDR
- 制造商:
Rochester Electronics LLC
- 制造商:
Texas Instruments
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Texas Instruments |
21+ |
NA |
13500 |
正品專賣,進(jìn)口原裝深圳現(xiàn)貨 |
詢價(jià) | ||
TI |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價(jià) | ||
NA |
23+ |
NA |
26094 |
10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè) |
詢價(jià) | ||
80000 |
詢價(jià) | ||||||
TI |
21+ |
MSOP-10 |
10000 |
低于市場(chǎng)價(jià),實(shí)單必成,QQ1562321770 |
詢價(jià) | ||
TI(德州儀器) |
23+ |
NA/ |
8735 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價(jià) | ||
TI |
23+ |
11+ |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
TI |
23+ |
11+ |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
TI |
2016+ |
MSOP10 |
5101 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
TI |
2020+ |
MSOP10 |
8333 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) |
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