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IPC-220

CompactIndustrialComputerSystemwith10thGenIntel?Core?iCPUSocket(LGA1200)

Features ?Intel?10thGenCore?iCPUsocket-type(LGA1200)withIntel?Q470E/ H420Echipset ?3xindependentdisplays(thirddisplayoutput(DP)viaoptionalcable) ?2xGigaLanand6xUSB3.2 ?2xRS-232/422/485and2xRS232serialports ?1xNVMeM.2(Q470EOnly),2x2.5HDD/SSD,a

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國(guó)）有限公司

IPC-220

MachineVisionEdgeSolutionReadyPlatform

Features ?IntuitiveGUIwithoutprogrammingskills ?Flexiblelicensingoptionsincludingfull,ID,alignment ?SupportsuptosixGigEvisioncameraswithupto20Mresolutioninmono andbayerformats ?Supportsconditionaloperator,externalAPIforadvancedapplications

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國(guó)）有限公司

IPC-220

CompactIndustrialComputerSystemwith6th/7thGenIntel?Core?iCPUSocket(LGA1151)

Features ?Intel?6th/7thGenCore?iCPUsocket-type(LGA1151)withIntel?Q170/ H110chipset ?3xindependentdisplays(thirddisplayoutput(DP)viaoptionalcable) ?2xGigaLanand6xUSB3.0(Q170)/4xUSB3.0(H110) ?2xRS-232/422/485and2xRS232serialports ?2x2.5HDD/SSD,a

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國(guó)）有限公司

IRF220

N-CHANNELPOWERMOSFETS

FEATURES ?LowRDs

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF220

4.0Aand5.0A,150Vand200V,0.8and1.2Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF220

N-ChannelPowerMOSFETs,7A,150-200V

N-ChannelPowerMOSFETs7A150-200V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF220

N-ChannelPowerMosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF220

NanosecondSwitchingSpeeds

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF220

HighSpeedApplications

DESCRIPTION ?DrainCurrentID=5A@TC=25℃ ?DrainSourceVoltage-:VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.8Ω(Max) ?HighSpeedApplications APPLICATIONS ?Switchingpowersupplies

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF220

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRFD220

PowerMOSFET(Vdss=200V,Rds(on)=0.80ohm,Id=0.80A)

HEXFETPowerMOSFET

IRF

International Rectifier

IRFD220

0.8A,200V,0.800Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFD220

0.8A,200V,0.800Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllothesepowerMOSFETsaredesignedforapplicationssuchasswitchingr

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFD220

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD220

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD220PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD220PBF

HEXFET?PowerMOSFET

HEXFETPowerMOSFET

IRF

International Rectifier

IRFD220PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE220

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerst

IRF

International Rectifier

IRFE220

SimpleDriveRequirements

IRF

International Rectifier

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7300
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2015
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300
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更多IP-220CY供應(yīng)商 更新時(shí)間2024-11-16 11:10:00

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