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IPB011N04L

OptiMOS3PowerTransistor

Features ?MOSFETforORingandUninterruptiblePowerSupply ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel ?Logiclevel ?Ultra-lowon-resistanceRDS(on) ?100Avalanchetested ?pb-freeplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB011N04LG

OptiMOS3PowerTransistor

Features ?MOSFETforORingandUninterruptiblePowerSupply ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel ?Logiclevel ?Ultra-lowon-resistanceRDS(on) ?100Avalanchetested ?pb-freeplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB011N04NG

OptiMOS3Power-Transistor

Features ?MOSFETforORingandUniterruptiblePowerSupply ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel ?Normallevel ?Ultra-lowon-resistanceRDS(on) ?Avalancherated ?Pb-freeplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

NTMYS011N04C

PowerMOSFET40V,12m,35A,SingleN??hannel

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTMYS011N04CTWG

PowerMOSFET40V,12m,35A,SingleN??hannel

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVLJWS011N04CL

MOSFET??Power,SingleN-Channel40V,11m,37A

Features ?SmallFootprintforCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMYS011N04C

MOSFET–Power,SingleN-Channel40V,12m,35A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?LFPAK4Package,IndustryStandard ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMYS011N04CTWG

MOSFET–Power,SingleN-Channel40V,12m,35A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?LFPAK4Package,IndustryStandard ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IPB011N04LGXT

  • 制造商：

    Infineon Technologies

  • 功能描述：

    Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) TO-263

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/英飛凌
22+
SOT-263-7
20000
保證原裝正品,假一陪十
 詢價(jià)
INFINEON/英飛凌
23+
TO-263-7L
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
INFINEON/英飛凌
24+
TO-263-7L
3750
原裝現(xiàn)貨假一賠十
 詢價(jià)
INFINEON/英飛凌
22+
D2PAK7PIN(TO-2637PIN
15041
詢價(jià)
Infineon(英飛凌)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
INFINEON/英飛凌
23+
TO263-7
10000
公司只做原裝正品
 詢價(jià)
Infineon
TO263-7
22+
6000
十年配單,只做原裝
 詢價(jià)
Infineon
23+
TO263-7
6000
原裝正品，支持實(shí)單
 詢價(jià)
Infineon(英飛凌)
22+
NA
7000
原廠原裝現(xiàn)貨
 詢價(jià)
Infineon(英飛凌)
23+
標(biāo)準(zhǔn)封裝
7000
原廠原裝現(xiàn)貨訂貨價(jià)格優(yōu)勢(shì)終端BOM表可配單提供樣品
 詢價(jià)
更多IPB011N04LGXT供應(yīng)商 更新時(shí)間2025-2-7 14:50:00

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