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IPB011N04NF2S

Marking:011N04NS;Package:PG-TO263-3;StrongIRFETTM2 Power-Transistor

Features ?Optimizedforwiderangeofapplications ?N-channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB011N04NG

OptiMOS3 Power-Transistor

Features ?MOSFETforORingandUniterruptiblePowerSupply ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel ?Normallevel ?Ultra-lowon-resistanceRDS(on) ?Avalancherated ?Pb-freeplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB011N04L

OptiMOS3PowerTransistor

Features ?MOSFETforORingandUninterruptiblePowerSupply ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel ?Logiclevel ?Ultra-lowon-resistanceRDS(on) ?100Avalanchetested ?pb-freeplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB011N04LG

OptiMOS3PowerTransistor

Features ?MOSFETforORingandUninterruptiblePowerSupply ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel ?Logiclevel ?Ultra-lowon-resistanceRDS(on) ?100Avalanchetested ?pb-freeplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

NTMYS011N04C

PowerMOSFET40V,12m,35A,SingleN??hannel

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTMYS011N04CTWG

PowerMOSFET40V,12m,35A,SingleN??hannel

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVLJWS011N04CL

MOSFET??Power,SingleN-Channel40V,11m,37A

Features ?SmallFootprintforCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMYS011N04C

MOSFET–Power,SingleN-Channel40V,12m,35A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?LFPAK4Package,IndustryStandard ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMYS011N04CTWG

MOSFET–Power,SingleN-Channel40V,12m,35A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?LFPAK4Package,IndustryStandard ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號:

    IPB011N04N

  • 制造商:

    Infineon Technologies AG

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
INFINEON
24+
TO-263-7
20000
原裝正品現(xiàn)貨
詢價(jià)
Infineon(英飛凌)
23+
TO263
4524
原廠直供,支持賬期,免費(fèi)供樣,技術(shù)支持
詢價(jià)
INFINEON/英飛凌
2021+
SOT-263-7L
17683
原裝進(jìn)口假一罰十
詢價(jià)
INFINEON/英飛凌
24+
TO263
15
只做原廠渠道 可追溯貨源
詢價(jià)
INFINEON
21+
TO-263-7
6880
只做原裝,質(zhì)量保證
詢價(jià)
INFINEON/英飛凌
21+
TO263
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價(jià)
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
INFINEON
23+
TO263
4000
正規(guī)渠道,只有原裝!
詢價(jià)
INFINEON
2年內(nèi)
TO263
16500
英博爾原裝優(yōu)質(zhì)現(xiàn)貨訂貨渠道商
詢價(jià)
Infineon(英飛凌)
23+
TO263
15316
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
詢價(jià)
更多IPB011N04N供應(yīng)商 更新時(shí)間2025-1-16 9:02:00