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IPB057N08N3-G

OptiMOS3 Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI057N08N3

OptiMOS3Power-TransistorFeaturesN-channel,normallevel

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI057N08N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI057N08N3G

OptiMOS3Power-TransistorFeaturesN-channel,normallevel

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI057N08N3-G

OptiMOS3Power-TransistorFeaturesN-channel,normallevel

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI057N08N3-G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP057N08N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPP057N08N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP057N08N3G

OptiMOS3Power-TransistorFeaturesN-channel,normallevel

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP057N08N3-G

OptiMOS3Power-TransistorFeaturesN-channel,normallevel

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP057N08N3-G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
23+
TO263-3
10000
公司只做原裝正品
 詢價
infineon
23+
TO-263
3000
原裝正品假一罰百!可開增票!
 詢價
Infineon
TO263-3
22+
6000
十年配單,只做原裝
 詢價
Infineon
23+
TO263-3
6000
原裝正品，支持實單
 詢價
Infineon/英飛凌
23+
20000
全新、原裝、現(xiàn)貨
 詢價
Infineon
22+
TO263-3
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
ADI
23+
D2PAK(TO-263)
8000
只做原裝現(xiàn)貨
 詢價
ADI
23+
D2PAK(TO-263)
7000
詢價
INFINEON/英飛凌
22+
TO263-3
92495
詢價
Infineon
24+
TO263-3
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
更多IPB057N08N3-G供應商 更新時間2025-1-18 14:30:00

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