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IPB144N12N3G

Marking：144N12N；Package：PG-TO263-3；OptiMOS?? Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB144N12N3-G

OptiMOS?? Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB16CN10N

OptiMOS2 Power-Transistor

Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB16CN10NG

Marking：16CN10N；Package：PG-TO263-3；OptiMOS2 Power-Transistor

Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB16CN10N-G

OptiMOS2 Power-Transistor

Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB180P04P4-03

P-Channel MOSFET

FEATURES ·DrainCurrent-ID=-180A@TC=25℃ ·DrainSourceVoltage-VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.8mΩ(Max)@VGS=-10V APPLICATIONS ·SwitchModePowerSupply ·UninterruptiblePowerSupply

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB19DP10NM

Marking：19DP10NM；Package：PG-TO263-3；OptiMOS Power-Transistor,-100V

Features *p-channel *100avalanchetested *Nomallevel *Enhancementmode *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB100N04S2-04

OptiMOS? Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB100N04S2L-03

OptiMOS? Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB100N04S3-03

OptiMOS-T Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    IPB1

  • 制造商：

    Infineon Technologies AG

  • 功能描述：

    MOSFET N-Channel 200V 88A TO263

供應商型號品牌批號封裝庫存備注價格
Infineon
24+
TO-263
3000
只做原裝正品，假一賠十
 詢價
INFINEON/英飛凌
24+
TO263
8950
BOM配單專家,發(fā)貨快,價格低
 詢價
INFINEON
22+
N/A
10000
原裝,現(xiàn)貨
 詢價
INFINEON
23+
N/A
10000
正規(guī)渠道,只有原裝!
 詢價
INFINEON
23+
TO-263
16500
一級分銷商!
 詢價
22+
sot
6600
正品渠道現(xiàn)貨,終端可提供BOM表配單。
 詢價
infineon
18+
PG-TO263-3
460
原裝現(xiàn)貨、工廠庫存
 詢價
INFINEON
SOT-263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
INFINEON/英飛凌
2019+
TO-263
32000
原裝正品,誠信經(jīng)營。
 詢價
INFINEON/英飛凌
24+
SOT-263
17494
原裝進口假一罰十
 詢價
更多IPB1供應商 更新時間2025-4-11 15:51:00

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