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IPB110N20N3LF

Marking：110N20LF；Package：PG-TO263-3；OptiMOSTM 3 Linear FET, 200 V

Features ?Idealforhot-swapande-fuseapplications ?Verylowon-resistanceRDS(on) ?WidesafeoperatingareaSOA ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Halogen-freeaccordingtoIEC6

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB110N20N3LF

Marking：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB120N04S3-02

Marking：3PN0402；Package：PG-TO263-3-2；OptiMOS-T Power-Transistor

Features ?N-channel-Enhancementmode ?AutomotiveAECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenpackage(RoHScompliant) ?UltralowRds(on) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB120N06S4-02

OptiMOS-T2 Power-Transistor

Features ?N-channel-Enhancementmode ?AECqualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?GreenProduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB120N06S4-02

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.8mΩ(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB120N06S4-03

OptiMOS-T2 Power-Transistor

Features ?N-channel-Enhancementmode ?AECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?GreenProduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB120N06S4-H1

OptiMOS-T2 Power-Transistor

Features ?N-channel-Enhancementmode ?AECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?GreenProduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB133N12NM6

Marking：133N12N6；Package：PG-TO263-3；MOSFET OptiMOS? 6 Power?Transistor, 120 V

Features ?N?channel,normallevel ?Verylowon?resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitching ?Pb?freeleadplating;RoHSco

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB139N08N3G

Marking：136N08N；Package：PG-TO-263-3；OptiMOS3 Power-Transistor

eatures ?Idealforhighfrequencyswitching ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRps(an)product(FOM) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplications ?Halogen-free

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB144N12N3

OptiMOS?? Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    IPB1

  • 制造商：

    Infineon Technologies AG

  • 功能描述：

    MOSFET N-Channel 200V 88A TO263

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon
24+
TO-263
3000
只做原裝正品，假一賠十
 詢價
INFINEON/英飛凌
24+
TO263
8950
BOM配單專家,發(fā)貨快,價格低
 詢價
INFINEON
22+
N/A
10000
原裝,現(xiàn)貨
 詢價
INFINEON
23+
N/A
10000
正規(guī)渠道,只有原裝!
 詢價
INFINEON
23+
TO-263
16500
一級分銷商!
 詢價
22+
sot
6600
正品渠道現(xiàn)貨,終端可提供BOM表配單。
 詢價
infineon
18+
PG-TO263-3
460
原裝現(xiàn)貨、工廠庫存
 詢價
INFINEON
SOT-263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
INFINEON/英飛凌
2019+
TO-263
32000
原裝正品,誠信經(jīng)營。
 詢價
INFINEON/英飛凌
24+
SOT-263
17494
原裝進口假一罰十
 詢價
更多IPB1供應(yīng)商 更新時間2025-4-9 17:10:00

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