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IIPD600N25N3

N-ChannelMOSFETTransistor

?DESCRITION ?Highfrequencyswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤60m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB600N25N3

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB600N25N3G

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB600N25N3G

OptiMOSTM3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB600N25N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB600N25N3G

OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB600N25N3-G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD600N25N3

N-ChannelMOSFETTransistor

?DESCRITION ?Highfrequencyswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤60m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPD600N25N3G

OptiMOSTM3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD600N25N3G

OptiMOSTM3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
INFINEON
23+
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
INFINEON
23+
7000
詢價
INFINEON/英飛凌
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INFINEON/英飛凌
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
INFINEON/英飛凌
22+
TO252-3
17561
詢價
SEMTECH
2025+
TO-252
4835
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價
英飛凌
21+
DPAK (PG-TO252-3)
6000
絕對原裝現(xiàn)貨
 詢價
Infineon(英飛凌)
2447
PG-TO252-3
115000
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
Infineon/英飛凌
21+
PG-TO252-3
6000
原裝現(xiàn)貨正品
 詢價
更多IPD600N25N3GXT供應(yīng)商 更新時間2025-2-28 15:35:00

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