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IPD60R1K4C6

600V CoolMOS C6 Power Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R1K4C6

N-Channel MOSFET Transistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.4? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD60R1K4C6

Material Content Data Sheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R1K4C6BTMA1

600V CoolMOS C6 Power Transistor IPD60R1K4C6

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R1K4C6_15

Material Content Data Sheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPD60R1K4C6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.4? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIPP60R1K4C6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.4? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP60R1K4C6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.4? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP60R1K4C6

MetalOxideSemiconductorFieldEffectTransistor

VCoolMOSC6PowerTransistor Applications ??PFCstages,hardswitchingPWMstagesandresonantswitchingPWM ??stagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server, ??TelecomandUPS.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU60R1K4C6

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPU60R1K4C6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU60R1K4C6

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IPD60R1K4C6

  • 功能描述：

    MOSFET N-CH 650V 3.2A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Infineon/英飛凌
20+
TO-252
16300
終端可免費(fèi)提供樣品,歡迎咨詢
 詢價(jià)
INFINEON
23+
TO252
828
全新現(xiàn)貨特價(jià)熱賣中!!!絕對(duì)有貨!!!
 詢價(jià)
INFINEON/英飛凌
2021+
SOT-252
17708
原裝進(jìn)口假一罰十
 詢價(jià)
INFINEON/英飛凌
24+
TO-252
22173
只做原廠渠道 可追溯貨源
 詢價(jià)
Infineon(英飛凌)
23+
N/A
12000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
INFINEON
18+
TO-252
22173
原裝庫存有訂單來談優(yōu)勢
 詢價(jià)
INFINEON/英飛凌
2021+
TO-252
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
 詢價(jià)
INFINEON/英飛凌
23+
TO-252
15000
原裝現(xiàn)貨假一賠十
 詢價(jià)
Infineon(英飛凌)
23+
TO-252
11318
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
INFINEON
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
更多IPD60R1K4C6供應(yīng)商 更新時(shí)間2024-12-25 13:00:00

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