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IPD60R385CP

Marking:6R385P;Package:PG-TO252;600V CoolMOS? CP Power Transistor

Ultralowgatecharge Extremedv/dtrated Highpeakcurrentcapability FullyqualifiedaccordingJEDECforindustrialapplications Pb-freeleadplating;RoHScompliant,availableinHalogenfreemoldcompound

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R385CP

CoolMOS Power Transistor

CoolMOS?PowerTransistor Features ?WorldwidebestRds,oninTO252 ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) ?Pb-freeleadplating;RoHScompliant; availableinHalogenfreemoldco

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R385CP

N-Channel MOSFET Transistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.385? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPD60R385CP

600V CoolMOS??CP Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R385CP

CoolMOS Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R385CP_09

CoolMOS Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R385CP_15

600V CoolMOS??CP Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI60R385CP

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.385? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPI60R385CP

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?HardswitchingSMPStopologies

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI60R385CP

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    IPD60R385CP

  • 功能描述:

    MOSFET N-CH 600 V 9 A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon/英飛凌
20+
TO-252
16300
終端可免費(fèi)提供樣品,歡迎咨詢
詢價(jià)
INFINEON/英飛凌
22+
TO252
42000
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
INFINEON
22+
sot
6600
正品渠道現(xiàn)貨,終端可提供BOM表配單。
詢價(jià)
原裝
24+
標(biāo)準(zhǔn)
49863
熱賣原裝進(jìn)口
詢價(jià)
INFINEON/英飛凌
2021+
SOT-252
17528
原裝進(jìn)口假一罰十
詢價(jià)
INFINEON/英飛凌
20+
TO-252
1000
進(jìn)口原裝支持含稅
詢價(jià)
INFINEON
2021+
TO-252
9450
原裝現(xiàn)貨。
詢價(jià)
INFINEON/英飛凌
24+
TO-252
2500
只做原廠渠道 可追溯貨源
詢價(jià)
Infineon(英飛凌)
23+
N/A
12000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
Infineon(英飛凌)
23+
TO-252
9555
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
詢價(jià)
更多IPD60R385CP供應(yīng)商 更新時(shí)間2025-1-24 13:58:00