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IPD60R600E6

600V CoolMOS E6 Power Transistor

Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R600E6

N-Channel MOSFET Transistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD60R600E6

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPD60R600E6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA60R600E6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220FPackage ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplicatio

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA60R600E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R600E6

600VCoolMOSE6PowerTransistor

Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R600E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R600E6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdev

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP60R600E6

600VCoolMOSE6PowerTransistor

Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    IPD60R600E6

  • 功能描述：

    MOSFET N-CH 650V 7.3A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon/英飛凌
20+
TO-252
16300
終端可免費提供樣品,歡迎咨詢
 詢價
INFINEON/英飛凌
2021+
SOT-252
16873
原裝進(jìn)口假一罰十
 詢價
INFINEON
21+
TO-252
450
詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
INFINEON
22+
TO-252
13568
實力現(xiàn)貨,隨便驗!
 詢價
Infineon(英飛凌)
23+
NA
7000
工廠現(xiàn)貨!原裝正品!
 詢價
Infineon(英飛凌)
23+
TO-252
12048
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div>
 詢價
Infineon(英飛凌)
23+
TO-252
16316
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
 詢價
INFINEON
23+
TO-252
12398
原裝進(jìn)口、正品保障、合作持久
 詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
更多IPD60R600E6供應(yīng)商 更新時間2024-12-25 13:00:00

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